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Conference
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2018 |
ZnO Nanowire-based Capacitive Humidity Sensor Integrated on a Polyimide Layer with a Micro-heater
Jaewoo Lee International Conference and Exhibition for Nanotechnology (NANOPIA) 2018, pp.1-1 |
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2016 |
A V-Band Current-Reused LNA With a Double-Transformer-Coupling Technique
Kong Sunwoo IEEE Microwave and Wireless Components Letters, v.26, no.11, pp.942-944 |
30 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
29 |
원문
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Journal
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2016 |
Real-time Imaging of Moving Living Objects using a Compact Terahertz Scanner
Han Sang-Pil Applied Physics Express, v.9, no.2, pp.1-3 |
7 |
원문
|
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Conference
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2014 |
Compact 10 ~ 13 GHz GaN Low Noise Amplifier MMIC using Simple Matching and Bias Circuits
Woojin Chang European Microwave Integrated Circuits Conference (EuMIC) 2014, pp.516-519 |
11 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
|
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Journal
|
2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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Journal
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2003 |
1/f noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under Fowler-Nordheim stress
Young Joo Song IEEE Transactions on Electron Devices, v.50, no.4, pp.1152-1156 |
12 |
원문
|
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Conference
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2002 |
RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition
Bongki Mheen International Microwave Symposium (IMS) 2002, pp.413-416 |
3 |
원문
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