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Journal
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2016 |
Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate
Soon-Won Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.20, pp.4485-4490 |
28 |
원문
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Conference
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2015 |
Stretchable Organic Ferroelectric Memory Thin-Film Transistors Fabricated on Elastomer Substrate
Soon-Won Jung International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1 |
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Journal
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2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 |
18 |
원문
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Conference
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2015 |
Flexible Nonvolatile Memory Transistors Using IGZO-Channel and Organic Ferroelectric Polymer P(VDF-TrFE) Fabricated on Elastomer Substrate
Soon-Won Jung European Materials Research Society (E-MRS) Meeting 2015 (Spring), pp.1-1 |
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Journal
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2015 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
Soon-Won Jung Organic Electronics, v.16, pp.46-53 |
50 |
원문
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Conference
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2015 |
Fabrication of Indium Gallium Zinc Oxide-based Stretchable Organic Ferroelectric Memory Transistors with Polyimide Stiff Regions on Elastomer Substrate
Soon-Won Jung International Nanotech Symposium and Nano-Convergence Expo (NANO KOREA) 2015, pp.1-1 |
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Conference
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2014 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Poly(Dimethylsiloxane) Elastomer
International Conference on Micro and Nano Engineering (MNE) 2014, pp.1-1 |
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Conference
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2012 |
Nonvolatile Memory Thin-Film Transistors using Organic Ferroelectric Gate Insulator
Optics+Photonics 2012, pp.1-1 |
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Journal
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2011 |
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
Yoon Sung Min Semiconductor Science and Technology, v.26, no.3, pp.1-25 |
42 |
원문
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Conference
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2010 |
Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator
윤성민 Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321 |
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Journal
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2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
108 |
원문
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Conference
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2009 |
Oxide/Organic Hybrid TFTs for Flexible Devices
Yang Shinhyuk 한국정보디스플레이학회 학술 대회 2009, pp.393-395 |
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Journal
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2008 |
Properties of Ferroelectric P(VDF-TrFE) 70/30 Copolymer Films as a Gate Dielectric
Jung Soonwon Integrated Ferroelectrics, v.100, no.1, pp.198-205 |
23 |
원문
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