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Journal
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2025 |
Mitigating hydrogen-related instabilities in oxide thin-film transistor via nitrogen-engineered passivation layer for thermal stability
이이삭 Applied Surface Science Advances, v.29, pp.1-11 |
0 |
원문
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Journal
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2025 |
Mitigating hydrogen-related instabilities in oxide thin-film transistor via nitrogen-engineered passivation layer for thermal stability
Na Jae Won Applied Surface Science Advances, v.29, pp.1-11 |
0 |
원문
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Journal
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2025 |
Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT
김희태 IEEE Transactions on Electron Devices, v.72, no.5, pp.2399-2405 |
1 |
원문
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Journal
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2024 |
Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors
김희태 IEEE Electron Device Letters, v.45, no.12, pp.2431-2434 |
4 |
원문
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Journal
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2021 |
Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications
권혁진 Advanced Functional Materials, v.31, no.10, pp.1-15 |
38 |
원문
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|
Journal
|
2021 |
Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications
Heqing Ye Advanced Functional Materials, v.31, no.10, pp.1-15 |
38 |
원문
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Journal
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2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133 |
21 |
원문
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Journal
|
2012 |
Fabrication of Amorphous InGaZnO Thin-Film Transistor-Driven Flexible Thermal and Pressure Sensors
박익준 Semiconductor Science and Technology, v.27, no.10, pp.1-6 |
26 |
원문
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Journal
|
2011 |
Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
허준영 Thin Solid Films, v.519, no.20, pp.6868-6871 |
38 |
원문
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Journal
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2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94, no.22, pp.1-4 |
111 |
원문
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Journal
|
2009 |
Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics
조인탁 IEEE Electron Device Letters, v.30, no.8, pp.828-830 |
45 |
원문
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|
Journal
|
2009 |
Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors
이정민 IEEE Electron Device Letters, v.30, no.5, pp.505-507 |
63 |
원문
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