Subjects :
Reverse leakage current
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2017 |
Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss
Jung Dong Yun ETRI Journal, v.39, no.6, pp.866-873 |
12 |
원문
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Journal
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2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 |
5 |
원문
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Journal
|
2016 |
Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application
Won Jong Il ETRI Journal, v.38, no.2, pp.244-251 |
10 |
원문
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Journal
|
2015 |
0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
Lee Hyun Soo IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 |
53 |
원문
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|
Journal
|
2015 |
High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer
Cho Doo Hyung Japanese Journal of Applied Physics, v.54, no.12, pp.1-5 |
6 |
원문
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|
Journal
|
2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29, no.7, pp.1-6 |
29 |
원문
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Journal
|
2014 |
Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
Park Young Rak Electronics Letters, v.50, no.16, pp.1164-1165 |
18 |
원문
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|
Journal
|
2009 |
Biosensors using the Si nanochannel junction-isolated from the Si bulk substrate
Chang-Geun Ahn Journal of Applied Physics, v.106, no.11, pp.1-6 |
6 |
원문
|
|
Journal
|
2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 |
6 |
원문
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특허 검색결과
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연구보고서 검색결과
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