Subject

Subjects : Reverse leakage current

  • Articles (9)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2017 Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss   Jung Dong Yun  ETRI Journal, v.39, no.6, pp.866-873 12 원문
Journal 2016 Surface Al Doping of 4H-SiC Via Low Temperature Annealing   Junbo Park  Applied Physics Letters, v.109, no.3, pp.1-5 5 원문
Journal 2016 Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application   Won Jong Il  ETRI Journal, v.38, no.2, pp.244-251 10 원문
Journal 2015 0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal   Lee Hyun Soo  IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 53 원문
Journal 2015 High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer   Cho Doo Hyung  Japanese Journal of Applied Physics, v.54, no.12, pp.1-5 6 원문
Journal 2014 Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure   V Rajagopal Reddy  Semiconductor Science and Technology, v.29, no.7, pp.1-6 29 원문
Journal 2014 Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths   Park Young Rak  Electronics Letters, v.50, no.16, pp.1164-1165 18 원문
Journal 2009 Biosensors using the Si nanochannel junction-isolated from the Si bulk substrate   Chang-Geun Ahn  Journal of Applied Physics, v.106, no.11, pp.1-6 6 원문
Journal 2009 Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique   문란주  Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 6 원문
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