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Journal
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2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
11 |
원문
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Conference
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2017 |
Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
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Conference
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2016 |
Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
Jae Won Do International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Journal
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
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Conference
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2014 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81 |
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 |
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Journal
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Jong-Won Lim Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 |
0 |
원문
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Conference
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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