Subjects :
metamorphic high electron mobility transistor (mHEMT)
논문 검색결과
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Year |
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Journal
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2023 |
Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel
Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 |
2 |
원문
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Journal
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2023 |
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Min Byoung-Gue ETRI Journal, v.45, no.1, pp.171-179 |
5 |
원문
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Journal
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2020 |
W‐Band MMIC chipset in 0.1‐μm mHEMT technology
Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561 |
6 |
원문
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Journal
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2020 |
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126 |
4 |
원문
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Journal
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2019 |
DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess
Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285 |
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원문
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Journal
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2012 |
K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors
Park Young Rak Microwave and Optical Technology Letters, v.54, no.11, pp.2624-2626 |
0 |
원문
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Journal
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2012 |
80–110 GHz MMIC amplifiers using a 0.1‐μm GaAs‐based mHEMT technology
Dong Min Kang Microwave and Optical Technology Letters, v.54, no.8, pp.1978-1982 |
1 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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Journal
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2005 |
A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems
Dong Min Kang ETRI Journal, v.27, no.2, pp.133-139 |
11 |
원문
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특허 검색결과
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