Subjects :
monolithic integrated circuit
논문 검색결과
| Type |
Year |
Title |
Cited |
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Journal
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2025 |
An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 𝜇m Gallium Nitride-on-Silicon Carbide Process
Lee Sang-Heung Applied Science and Convergence Technology, v.34, no.1, pp.42-45 |
0 |
원문
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Journal
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2018 |
Trends in Terahertz Semiconductor based on Electron Devices
Kang Dongwoo 전자통신동향분석, v.33, no.6, pp.34-40 |
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원문
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Journal
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2016 |
AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss
Jeong Jin Cheol ETRI Journal, v.38, no.5, pp.972-980 |
14 |
원문
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Journal
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2014 |
Technical Trends of Next-Generation GaN Power Amplifier for High-Frequency and High-Power
Lee Sang-Heung 전자통신동향분석, v.29, no.6, pp.1-13 |
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원문
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Conference
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2014 |
A 40 W AlGaN/GaN MMIC High Power Amplifier for C-Band Radar Applications
Jeong Jin Cheol European Microwave Conference (EuMC) 2014, pp.1126-1129 |
6 |
원문
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Journal
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2014 |
A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications
Jeong Jin Cheol ETRI Journal, v.36, no.3, pp.498-501 |
22 |
원문
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Journal
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2013 |
A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications
Jeong Jin Cheol ETRI Journal, v.35, no.3, pp.546-549 |
9 |
원문
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Journal
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2007 |
A Flip-Chip-Packaged InP HBT Transimpedance Amplifier for 40-Gb/s Optical Link Applications
Ju Chull Won Journal of the Korean Physical Society, v.50, no.3, pp.862-865 |
2 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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연구보고서 검색결과
| Type |
Year |
Research Project |
Primary Investigator |
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