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Journal
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2019 |
Active Control of Polarization State of the Light in InP Waveguide
Shinmo An Optics Express, v.27, no.26, pp.37806-37815 |
11 |
원문
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Journal
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2019 |
Investigation of Improved Performance for Organic Rectifying Diodes via Electrical Annealing
Kang Chan-Mo IEEE Access, v.7, pp.84082-84090 |
2 |
원문
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Journal
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2018 |
EML based real-time 112 Gbit/s (2 × 56.25 Gbit/s) PAM-4 signal transmission in C-band over 80 km SSMF for inter DCI applications
Jie Hyun Lee Optical Fiber Technology, v.45, pp.141-145 |
8 |
원문
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Journal
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2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
무하마드칸 Nanotechnology, v.29, no.39, pp.1-6 |
7 |
원문
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Journal
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2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
22 |
원문
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Journal
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2017 |
Effects of Ga concentration in Cu(In,Ga)Se 2 thin film solar cells with a sputtered-Zn(O,S) buffer layer
Wi Jae-Hyung Solar Energy, v.145, pp.59-65 |
9 |
원문
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Conference
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2015 |
Photoelectric Characteristics of Schottky Diode Based on a Ge/Si Core/Shell Nanowire
Suh Dongwoo International Conference on Sensing Technology (ICST) 2015, pp.199-202 |
0 |
원문
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Journal
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2015 |
Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
Hyun-Gyu Jang Japanese Journal of Applied Physics, v.54, no.7, pp.1-5 |
3 |
원문
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Journal
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2012 |
Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ’s and electrons
권영일 Journal of the Korean Physical Society, v.60, no.10, pp.1803-1808 |
0 |
원문
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Journal
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2008 |
60-GHz System-on-Packaging Transmitter for Radio-Over-Fiber Applications
Kim Je Ha Journal of Lightwave Technology, v.26, no.15, pp.2379-2387 |
9 |
원문
|
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Journal
|
2008 |
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 |
5 |
원문
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Journal
|
2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
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Journal
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2007 |
Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal γ-ray Dosimeter
Park Jong-Moon Journal of the Korean Physical Society, v.51, no.1, pp.10-17 |
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Journal
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2007 |
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
Jun Myung Sim Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 |
5 |
원문
|
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Conference
|
2006 |
Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics
Park Kun Sik IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072 |
3 |
원문
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Conference
|
2006 |
New Analysis on the Interface Trap States at Schottky Contact
Jun Myung Sim International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2 |
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Journal
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2006 |
Development and RF Characteristics of Analog 60-GHz Electroabsorption Modulator Module for RF/Optic Conversion
Kim Je Ha IEEE Transactions on Microwave Theory and Techniques, v.54, no.2, pp.780-786 |
37 |
원문
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