ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Compound Semiconductor Maximum Oscillation Frequency Heterojunction Bipolar Transistors(HBTs) Components Technology T-Shaped Gate Gate Recess Gate Length W-Band Breakdown Voltage(BDV) Drain Current Fabrication Process 94 Ghz Microwave Monolithic Integrated Circuits(MMIC) Via-Hole 30 Ghz Millimeter Wave(mmWave) Two-Step Silicon Nitride Inp Hbt Metamorphic High Electron Mobility Transistor(mHEMT) Microwave Integrated Circuit 60 Ghz Multicast Protocol 6 Ghz Electrical Characterization Dc Characteristics Inductively-Coupled Plasma(ICP) Sic Substrate Self-Aligned Power Characteristics Rf Performance Low Noise Amplifier(LNA) Field Plate Dry Etching Minimum Noise Figure Electrical Properties(I-V curve) Depletion Mode Diode Ideality Factor Next-Generation X-Band Rf Characteristics S-Band Small Signal Gain National Defense Gate Dielectric Gan Hemt Devices Smart Lighting Transconductance (Gm) Platform Development Etching Conditions Design And Implementation Transimpedance Amplifier(TIA) Overlay Multicast Light Sources Schottky Diode Power Amplifiers(PAs) Epitaxial Layer Gan-On-Sic Hemt Inp/Ingaas Heterojunction Nitride Layer Gate Resistance 40 Gb/S 3 V Gas Mixture Streaming Service Contact Region Dc Output High Frequency(HF) Enhancement-Mode Front-Side 28 Ghz Multicast Services Wet Chemical Etching Device Degradation Application Layer Transmission System 70 Ghz Oxygen Plasma Treatment Pull Test Power Density Multicast Streaming Creative Technology Threshold Voltage Shift Test-Bed Noise Level Etch Depth Gaas Heterojunction Bipolar Transistor Gate Width Recessed Gate 55 Ghz Metal Contact Citric Acid Ingap/Gaas Heterojunction New Approach Output Power Etching Process Gate Foot 5 Nm And Gate Icp Etching Sensor Node Device Performance Normally-Off Output Characteristics Power Performance E-Beam Lithography Etch Rates Frequency Range Linear Extrapolation Load-Pull Mim Capacitor Multicast Delivery Schottky Contacts Wet Etching Control Protocol Current Density Broadband Amplifier 18 Ghz Gan-Based Mm-Wave Applications Matching Circuit Sige Bicmos Double Heterojunction Bipolar Transistor(DHBT) Optical Link Optical Transmission Recess Depth Design And Fabrication De-Multiplexer Diode Characteristics Degradation Mechanism Bonding Process High Gain Heterostructure Field Effect Transistors Hot Electrons Negative Resistance Noise Characteristics Oscillator Circuit Ohmic Contact Power Hemt Post Amplifier(PA) Electrochemical Reaction(ECR) Electrode Process Frequency Tuning Range Gate Electrode Gain Flatness Metal-Semiconductor Interface Molecular Beam Epitaxy(MBE) Target Current Wafer Level Package Voltage Swing Semiconductor Technology Contact Reliability Conversion Loss Data Delivery Data Rate Driver Amplifier Down-Converter Asynchronous Processor Control Gate Tuning Diode Silicon Heterojunction Treatment Process Ingap/Gaas Hbt Nitride Passivation Noise Performance Oscillating Frequency Plasma-Enhanced Chemical Vapor Deposition(PECVD) Electrical Measurements Gaas Mmic Reflection Coefficient Resistive Mixer Mobile Environment Temperature Range Transmission Line Model Junction Temperature Semiconductor Heterostructure Wire Bonding Saturation Current Single-Ended Drain Electrode Diode Parameters Device Layout High Signal High Temperature Storage Ip Multicast One-To-Many Off-State Etching Technique Flip-Chip Bonding Gate Leakage Current Mesa Structure Microstrip Line Thermal Stability(TGA) Etching Rate Device Fabrication Atomic Layer Deposition Method Active Region Buffer Layer 110 Ghz 39 Ghz Image Rejection Mixer Input Signal Non-Uniformity Output Matching Plasma Process Etching Solution Fine Pitch Bump Gaas Process Rf Power Gan Power Amplifier Metal-Insulator-Semiconductor(MIS) Ultralow Power(ULP) Three-Layered Floating Gate Channel Layer Complementary Metal-Oxide-Semiconductor(CMOS) Double-Deck Device Characteristics T-Gate Operating Frequency 20 Nm Passivation Film Optical Communication Systems Failure Analysis(FA) Gate Voltage Gan Device Radar System Ka-Band Metal Interface Mobility Support Multiple Sessions Carbon-Doped Selective Area Service Overlay Technical Development Conversion Gain Bicmos Technology Contact Degradation Insertion Layer Input Matching Operation Test Fmcw Radar Process Technology Eye Opening Electron Beam Lithography Frequency Characteristics Reference Device Limiting Amplifier Many-To-Many Thermal Performance Semiconductor Process Surface Characteristics Wideband Operation Spurious Suppression Cross Section Common-Source Double Plasma Device Reliability Current Collapse Three-Terminal Temperature Dependence Trap Effect High Output Inp Dhbt Image Signal Inalas/Ingaas Mhemt On-Wafer Pulsed Power Off-Chip Ohmic Electrode Power Amplifier Mmic Electrical Characteristics Fiber Optic Reactive Ion Etching(RIE) Frequency Multiplier Low Phase Noise Metal Diffusion State Performance Scaling Effect Structural Parameters Silicon-Germanium(SiGe) Sige Hbt Sic Device Channel Current Dual Gate(DG) Dielectric Layer Different Structures Current Gain Cutoff Frequency Current-Voltage Characteristics Transistor Devices 9.5 GHZ 3.5 Ghz High-Temperature Operation Intelligent Vehicle Output Voltage End To End(E2E) Electrochemical Potential Electron Beam Exposure Fluoride-Based Plasma Treatment Fully Integrated Group Communication Return Loss(RL) Recess Etch Level Control Microwave Characteristics Lithography Process Measuring Channel Multicast Network Multimedia Streaming Drain Voltage Manufacturing Processes Surface Treatments Self-Heating Effect(SHE) Wide Bandwidth Storage Test Thermoelectric Device Single-Chip