ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Maximum Oscillation Frequency Heterojunction Bipolar Transistors(HBTs) Compound Semiconductor Components Technology T-Shaped Gate Gate Recess Gate Length W-Band Breakdown Voltage(BDV) 94 Ghz Drain Current Fabrication Process Microwave Monolithic Integrated Circuits(MMIC) Metamorphic High Electron Mobility Transistor(mHEMT) Via-Hole Millimeter Wave(mmWave) 30 Ghz Silicon Nitride Inp Hbt Microwave Integrated Circuit 60 Ghz Two-Step Multicast Protocol Electrical Characterization 6 Ghz Inductively-Coupled Plasma(ICP) Dc Characteristics Sic Substrate Power Characteristics Rf Performance Low Noise Amplifier(LNA) Field Plate Self-Aligned Electrical Properties(I-V curve) 40 Gb/S Dry Etching Next-Generation Epitaxial Layers Diode Ideality Factor X-Band Rf Characteristics S-Band Small Signal Gain Depletion Mode Gan Hemt Devices Gate Dielectric National Defense Smart Lighting Etching Conditions Transconductance (Gm) Platform Development Design And Implementation Overlay Multicast Light Sources Transimpedance Amplifier(TIA) Schottky Diode Gan-On-Sic Hemt Sige Bicmos Power Amplifiers(PAs) Gate Resistance Nitride Layer Inp/Ingaas Heterojunction Gas Mixture 3 V Minimum Noise Figure Optical Link High Frequency(HF) Dc Output Contact Region Front-Side Enhancement-Mode Wet Chemical Etching Multicast Services 28 Ghz Multicast Streaming Device Degradation Pull Test Oxygen Plasma Treatment 70 Ghz Transmission System Power Density Application Layer Creative Technology Etch Depth Gaas Heterojunction Bipolar Transistor Gate Width Noise Level Recessed Gate 55 Ghz Threshold Voltage Shift Metal Contact Test-Bed Gate Foot Ingap/Gaas Heterojunction 5 Nm Output Power Etching Process New Approach Citric Acid And Gate Sensor Node Icp Etching Etch Rates Power Performance Output Characteristics Linear Extrapolation Wet Etching Load-Pull Schottky Contacts Normally-Off E-Beam Lithography Multicast Delivery T-Gate Frequency Range Mim Capacitor Device Performance Broadband Amplifier Gan-Based Mm-Wave Applications Matching Circuit 18 Ghz Control Protocol Current Density Optical Transmission Streaming Service Double Heterojunction Bipolar Transistor(DHBT) Recess Depth Target Current Noise Characteristics Oscillator Circuit Gate Electrode Electrode Process De-Multiplexer Wafer Level Package Negative Resistance High Gain Post Amplifier(PA) Hot Electrons Metal-Semiconductor Interface Heterostructure Field Effect Transistors Electrochemical Reaction(ECR) Voltage Swing Gain Flatness Semiconductor Technology Frequency Tuning Range Design And Fabrication Diode Characteristics Degradation Mechanism Ohmic Contact Power Hemt Molecular Beam Epitaxy(MBE) Bonding Process Control Gate Treatment Process Ingap/Gaas Hbt Resistive Mixer Noise Performance Reflection Coefficient Asynchronous Processor Contact Reliability Electrical Measurements Oscillating Frequency Plasma-Enhanced Chemical Vapor Deposition(PECVD) Gate Fabrication Temperature Range Silicon Heterojunction Wire Bonding Tuning Diode Saturation Current Data Delivery Single-Ended Nitride Passivation Gaas Mmic Driver Amplifier Data Rate Junction Temperature Semiconductor Heterostructure Conversion Loss Mobile Environment Transmission Line Model High Signal Gate Leakage Current One-To-Many High Temperature Storage Flip-Chip Bonding Ip Multicast Drain Electrode Off-State Etching Technique Diode Parameters Thermal Stability(TGA) Microstrip Line Device Layout Mesa Structure Etching Rate Floating Gate Three-Layered Ultralow Power(ULP) 110 Ghz Rf Power Output Matching Metal-Insulator-Semiconductor(MIS) Fine Pitch Bump 39 Ghz Image Rejection Mixer Etching Solution Device Fabrication Active Region Atomic Layer Deposition Method Input Signal Buffer Layer Non-Uniformity Gaas Process Plasma Process Gan Power Amplifier Technical Development Selective Area Gate Voltage Multiple Sessions Service Overlay Double-Deck Gan Device Failure Analysis(FA) Operating Frequency Ka-Band Carbon-Doped Device Characteristics Channel Layer Optical Communication Systems Complementary Metal-Oxide-Semiconductor(CMOS) Radar System Mobility Support Passivation Film 20 Nm Metal Interface Limiting Amplifier Operation Test Bicmos Technology Fmcw Radar Insertion Layer Semiconductor Process Surface Characteristics Wideband Operation Frequency Characteristics Reference Device Electron Beam Lithography Process Technology Eye Opening Thermal Performance Conversion Gain Many-To-Many Spurious Suppression Contact Degradation Input Matching Double Plasma Frequency Multiplier Sige Hbt Image Signal Ohmic Electrode On-Wafer Off-Chip Low Phase Noise Structural Parameters Down Converter Inalas/Ingaas Mhemt Electrical Characteristics State Performance Inp Dhbt Three-Terminal Temperature Dependence Fiber Optic Sic Device Reactive Ion Etching(RIE) Power Amplifier Mmic High Output Device Reliability Scaling Effect Metal Diffusion Cross Section Pulsed Power Common-Source Trap Effect Silicon-Germanium(SiGe) Current Collapse Measuring Channel Level Control Recess Etch Electrochemical Potential 3.5 Ghz Wide Bandwidth Different Structures Fluoride-Based Plasma Treatment Dielectric Layer Intelligent Vehicle Lithography Process Manufacturing Processes Dual Gate(DG) Electron Beam Exposure 9.5 GHZ Group Communication Channel Current Drain Voltage Fully Integrated Thermoelectric Device Output Voltage Current Gain Cutoff Frequency Return Loss(RL) End To End(E2E) Storage Test Multimedia Streaming High-Temperature Operation Self-Heating Effect(SHE) Transistor Devices Current-Voltage Characteristics Microwave Characteristics Surface Treatments Single-Chip Multicast Network