ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gate Length Compound Semiconductor Components Technology Maximum Oscillation Frequency Bipolar Transistors T-Shaped Gate Breakdown Voltage 94 Ghz Microwave Monolithic Integrated Circuits(MMIC) Gate Recess Drain Current Microwave Integrated Circuits(MICs) 6 Ghz W Band Inp Hbt Silicon Nitride Gate Width Low-Noise Amplifier(LNA) Metamorphic High Electron Mobility Transistor(mHEMT) Multicast Protocol Two-Step Via-Hole Fabrication Process Self-Aligned Smart Lighting Wet Etching Sic Substrate Electrical Characterization 60 Ghz Matching Circuit Nitride Layer Power Characteristics S-Band 28 Ghz Overlay Multicast Transimpedance Amplifier(TIA) Inp-Based And Gate Rf Performance 5 Nm Device Characteristics Enhancement Mode(E-mode) Gate Dielectric Ohmic Contact 30 Ghz Creative Technology Gan-On-Sic Hemt Inp/Ingaas Heterojunction Frequency Range Field Plate Light Source Dc Characteristics Rf Characteristics Small Signal Gain National Defense Next-Generation Sige Bicmos Platform Development 40 Gb/S Design And Implementation Gan Hemt Devices Schottky Contacts Epitaxial Layer Transmission System Mim Capacitor Power Gain Test-Bed Ka-Band Etching Conditions High Power Applications Output Matching Transconductance (Gm) Double Heterojunction Bipolar Transistor(DHBT) Depletion-Mode Etch Rates Metal Contact Electron Beam Lithography Inp Heterojunction Bipolar Transistor Normally-Off Multicast Services Fabrication Method Etching Process Mesa Etching Recess Depth Optical Link Three-Terminal Application Layer Multicast Delivery Recessed Gate Control Protocol 3 V Multicast Streaming 70 Ghz Radar System Current Density Dc Measurements Gan-Based Broadband Amplifier 38 Ghz Optical Transmission Etch Depth Output Power Density Gaas Heterojunction Bipolar Transistor Schottky Diode Gallium Nitride (Gan) Sensor Node Gate Resistance Power Amplifier Mmic Electrical Properties New Approach Gate Foot E-Beam Lithography Inductively Coupled Plasma(ICP) Minimum Noise Figure Diode Parameters Citric Acid Ingap/Gaas Heterojunction 9.5 GHZ Diode Ideality Factor Device Degradation Drain Voltage Dry Etching Recess Etch Pulsed Power T-Gate Gas Mixtures Streaming Service 18 Ghz Icp Etching Threshold Voltage Shift Gan Hemt Technology Current Status Frequency Characteristics Gan Hpa Wire Bonding Transistor Devices High Output Lithography Technology Intelligent Vehicle Metal Diffusion Wide Band Gap Etching Profile Bonding Process Current-Voltage Characteristics Gate Leakage Current Tuning Diode 5g Communication Molybdenum-Copper Operating Condition Oxygen Plasma Treatment Sic Device Temperature Dependence Eye Opening Voltage Swing 20 Nm Stable Process Thermoelectric Device Gan Device Pinch-Off Fluoride-Based Plasma Treatment Fully Integrated Negative Resistance S-Parameter Measurement Atomic Layer Deposition Method Non-Uniformity Service Market Buffer Layer Complementary Metal-Oxide-Semiconductor(CMOS) Driver Amplifier Group Communication Off-State Sin Deposition High Power Amplifier 5g Mobile Communication Device Performance Positive Slope 2 Mm Current Collapse Gaas Process Input Matching Multimedia Streaming Single Chip Source Resistance Data Rate Gain Flatness Low Energy S-Parameter Extraction Surface Treatments Contact Degradation Gate Voltage High-Frequency Performance Integrated Circuit Technology Linear Extrapolation Lithography Process Microwave Characteristics Microstrip Line Schottky Barrier Height High Temperature Storage Silicon Heterojunction 3.5 Ghz Design And Fabrication Epitaxial Structure Temperature-Controlled Thermal Stability Degradation Mechanism Hot Electrons Mobility Support Operation Test Storage Test Gaas Mmic Data Delivery Packaging Technology Drain Electrode Dielectric Layer End To End(E2E) Optical Communication Systems Load-Pull Model And Simulation Frequency Efficiency Technology Trends Current Gain Cutoff Frequency Metal-Insulator-Semiconductor(MIS) De-Multiplexer Fmcw Radar Doping Concentration Dc Output Frequency Bandwidth Ni-Based Rf Measurement Selective Area Temperature-Dependent 200 Ghz Single-Ended Band Power Different Structures Device Isolation Double-Deck Etching Solution Reference Device Frequency Multiplier Indium Content Pull Test Structural Parameters Target Current Fine Pitch Bump Insertion Layer Carbon-Doped De-Embedding Molecular Beam Epitaxy(MBE) Plasma Process Pulse Width Communication Services Drain Bias Inalas/Ingaas Hemt Reflection Coefficient Trap Effect Mm-Wave Applications Wideband Operation Failure Analysis Noise Level Ohmic Metal Radio Frequency (Rf) Surface Characteristics Global Optimization Gan Power Device Contact Region Image Rejection Mixer Output Voltage Power Hemt High Gain Nitride Passivation Wide Bandwidth Channel Current Common-Source Electrochemical Reactions Multicast Network Research Institute Sige Hbt Model Parameter Semiconductor Technology Communication Infrastructure Etching Technique High Signal Spurious Suppression Device Fabrication Electrode Process Fiber Optic Input Signal Ingap/Gaas Hbt Wet Chemical Etching Flip-Chip Bonding Simulation And Measurement Simple And Reliable Semiconductor Heterostructure State Performance Thermal Performance Metal Interface Measuring Channel Cross Section Gain Compression Transmission Line Model Wide Temperature Range Key Device Level Control Measurement Data Many-To-Many Mobile Environment Resistive Mixer Schottky Layer Front Side X-Band Applications Heterostructure Field Effect Transistors Noise Performance One-To-Many Source And Drain Down-Converter Device Layout Electrical Measurements High Carrier Concentration Off-Chip High Temperature Operation Bicmos Technology Semiconductor Process Double Plasma Gan Power Amplifier High-Efficiency Power Amplifiers(PAs) Mesa Structure Active Region Maximum Output Power Scattering Parameters(S-parameters) Gate Electrode Multiple Sessions Dual Gate(DG) Electrochemical Potential Gate Annealing Ohmic Electrode Control Gate Conversion Gain Duty Cycle(DC) Output Characteristics Post Amplifier(PA) Process Technology Self-Heating Effect(SHE) Limiting Amplifier(LA) Noise Characteristic Network Analyzer(NA) Temperature Effect Inp Dhbt Saturation Characteristics Conversion Loss Gate Fabrication Process Conditions Wafer Level Package(WLP) High-Frequency Applications On-Wafer Three-Layered Ip Multicast Junction Temperature Passivation Film Treatment Process 39 Ghz Diode Characteristics Floating Gate Saturation Current Ultra-Low Power(ULP) Image Signal Electron Beam Exposure Frequency Tuning Range Oscillating Frequency Rf Power Ku-Band Reactive Ion Etching Scaling Effect Etching Rate Ramp-Up Technical Development Millimeter-Wave Band Manufacturing Processes Asynchronous Processor Annealing Process Device Reliability Gate Bias Metal-Semiconductor Interface Oscillator Circuit Channel Layer 55 Ghz Low Phase Noise Silicon-Germanium(SiGe) 110 Ghz Contact Reliability Electrical Characteristics Inalas/Ingaas Mhemt Operating Frequency Power Performance Ion Implantation Plasma-Enhanced Chemical Vapor Deposition(PECVD) Return Loss Service Overlay