ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Breakdown Voltage(BDV) Semiconductor Device Algan/Gan-On-Si Etching Conditions Recent Progress Low-Rate Forward Current Dry Etching Recess Depth Electrical Characteristics Channel Width Silicon Substrate Gan-Based Low Turn-On Voltage Thermal Properties Iii-Nitrides Thermal Behavior Trade-Off Structural Changes 5 Nm Reverse Leakage Current Current Collapse 4h-Sic Cvd Diamond Surface Passivation Pfc Converter Forward And Reverse Rf Power High Power Conversion Efficiency Device Structure Defect Analysis Etch-Stop High Voltage Turn-On Threshold Voltage MOS-HEMT Mass Spectrometry Analysis N-Type Power Density 700 V Algan/Gan Mis-Hemt Bipolar Junction Transistor Activation Ratio Built-In Voltage Dopant Activation Fine Control Field Metal Gate Fabrication Gate Leakage Gan On Sic Recessed Gate Sic Surface Annealing Process Built-In Potential Etching Process Electronic Materials Etching Rate Gan Power Device High-Power Applications High Temperature Characterization Inductively-Coupled Plasma(ICP) 900 V Metal Ring Off-State Leakage Power Semiconductor Single Crystal Diamond Substrate Gan Hemt I-V Measurement Thermal Oxidation Low Damage Peak Electric Field Reverse Recovery Charge Secondary Ion Mass Spectrometry Schottky Barrier Height Al Doping Al Layer Al Concentration Current Status Etch Rates Gate Bias Gan-On-Diamond Gan Device High Efficiency Thermally Annealing Technology Cad Power Transistor Al Film Anode Structure Chemical Vapor Deposition Device Size Diamond Heat Spreader Fin-Gate P-Doping Current Density Various Conditions Efficiency And Power Gate Recess High Electron Mobility Transistor(HEMT) Novel Device Stop Layer Voltage Shift 16 Nm Blocking Voltage Doping Profile Doping Method Enhancement-Mode Technology Trends Low-Temperature Annealing Lift-Off Process Multi-Step On-Current Ring Structure Smooth Morphology X-Ray Topography