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Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Breakdown Voltage(BDV) Semiconductor Device Algan/Gan-On-Si Dry Etching Silicon Substrate Etching Conditions Channel Width Electrical Characteristics Recent Progress Recess Depth Forward Current Low-Rate Gan-Based Low Turn-On Voltage Current Collapse Structural Changes Thermal Behavior Iii-Nitrides High Power Conversion Efficiency Surface Passivation Pfc Converter Forward And Reverse Cvd Diamond Thermal Properties Rf Power Trade-Off 5 Nm Gan Power Device Reverse Leakage Current 4h-Sic Device Structure Power Density MOS-HEMT Mass Spectrometry Analysis N-Type Defect Analysis Etch-Stop Turn-On Threshold Voltage Gate Fabrication Gate Leakage Gan On Sic Initialization Vector(IV) Algan/Gan Mis-Hemt Activation Ratio Dopant Activation Fine Control 700 V Recessed Gate Built-In Voltage Field Metal Sic Surface High Voltage Applications High-Power Applications High Temperature Characterization Built-In Potential Annealing Process Etching Process Etching Rate 900 V Metal Ring Off-State Leakage Power Semiconductor Single Crystal Inductively-Coupled Plasma(ICP) Electronic Materials Gan Hemt I-V Measurement Peak Electric Field Power Transistors Reverse Recovery Charge Secondary Ion Mass Spectrometry Schottky Barrier Height Thermal Oxidation Low Damage Diamond Substrate Gate Bias Gan-On-Diamond Gan Device High Efficiency Al Doping Al Concentration Al Film Current Status Etch Rates Technology Cad Al Layer Thermally Annealing Anode Structure Chemical Vapor Deposition Device Size Diamond Heat Spreader Fin-Gate Current Density Various Conditions P-Doping Gate Recess High Electron Mobility Transistor(HEMT) Efficiency And Power Novel Device Stop Layer Bipolar Junction Transistors Voltage Shift Low-Temperature Annealing Lift-Off Process Blocking Voltage Doping Method Enhancement-Mode Multi-Step On-Current Ring Structure Smooth Morphology X-Ray Topography Technology Trends 16 Nm Doping Profile