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Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Algan/Gan-On-Si Cvd Diamond Field Effect Transistor(FET) Semiconductor Device Low-Rate High Power Applications Dry Etching Etching Conditions High Frequency(HF) 5 Nm High-Electron Mobility Transistor(HEMT) Recess Depth Rf Applications Electrical Characteristics Gan On Sic Thermal Properties Gan-Based Recent Progress Vertical Gan Pin Diode Thermal Behavior High Performance Gan Power Device Diamond Substrate Large-Scale High Power Performance Etching Rate Silicon Substrate Surface Passivation Wide Bandgap Semiconductor Gan Device Switching Devices High Breakdown Voltage 4h-Sic Current Collapse Turn-On Threshold Voltage Low On-Resistance Channel Width High Thermal Conductivity Iii-Nitride Forward Current Gate Recess High Efficiency Off-State Leakage Cut-Off Frequency Chemical Vapor Deposition Low Turn-On Voltage Etch-Stop Power Semiconductor Channel Length Point Defects Design And Simulation Gan-On-Diamond Dc-Dc Converters Reverse Leakage Current Built-In Voltage Current Status On-Current P-Doping Ring Structure Diamond Semiconductor Gallium Nitride Low-Temperature Annealing 16 Nm Sic Substrate Material Properties Optoelectronic Devices Recessed Gate Doping Profile Structural Changes Harsh Environment Technology Cad High Voltage Applications Plasma Etching Process Device Applications Fine Control Thermally Annealing Small-Sized Device Size Current Density Gan Fet Al Film Al Layer Maximum Oscillation Frequency Working Temperature Various Conditions Schottky Barrier Height High Breakdown Field Physical Properties Metal Ring Thermal Oxidation Diamond Heat Spreader Low Loss Power Conversion Modules Power Transistors Blocking Voltage High Voltage Operation Output Power Density Reverse Recovery Charge Algan/Gan Mishemts Gan Transistor Research And Development(R&D) I-V Measurement Pfc Converter Technology Trends Fin-Gate 900 V Au-Free Series Resistance Voltage Shift Mass Spectrometry Analysis Surface Area State-Of-The-Art Power Amplifiers(PAs) Built-In Potential Forward And Reverse Stop Layer Efficiency And Power Algan/Gan Hemts Lift-Off Process Reverse Breakdown Ohmic Metal Radio Frequency (Rf) Device Structure Enhancement Mode(E-mode) Low Specific On-Resistance Ohmic Contact Gate Leakage Low Contact Resistance Peak Electric Field Bulk Growth High Current Inductively Coupled Plasma Etching Substrate Surface Sic Surface Experimental Analysis Fast Switching Speed Gan Semiconductor Multi-Step Critical Electric Field Self-Heating Dopant Activation Silicon Carbide(3C-SiC) Development Trends Secondary Ion Mass Spectrometry Bipolar Junction Transistor(BJT) High Power Device Activation Ratio Short Wavelength Al Doping P-Type Gan Two-Dimensional Electron Gas(2DEG) Si Substrate Performance Evaluation Defect Analysis High Power Conversion Efficiency N-Type Doping Limiting Factor MOS-HEMT Gan Hemt Technology Gallium Arsenide Electrical Enhancement Field Metal Optimal Condition Power Gain 700 V High Switching Speed Thermal Diffusion Gallium Oxide Positive And Smooth Morphology Fabrication Process Improved Performance Bulk Crystal Growth Energy Market Different Substrates Gate Fabrication Low Damage Practical Use Power And Frequency(HVPF) Renewable Energy 300 Ghz X-Ray Topography Doping Method Etch Rates Initialization Vector(IV) Sapphire Substrates Anode Structure Epitaxy Growth High Temperature Characterization Vth Shift Rf Power Amplifier Trade-Off Al Concentration Low-Noise Amplifier(LNA) Rapid Development Novel Device Power Switching Device Tunable Bandgap Gate Bias Annealing Process Surface Refinement Electronic Materials Ion Implantation 7 Mm Single Crystal