ETRI-Knowledge Sharing Plaform

High Performance Oxide Tfts Metal Oxide Thin-Film Transistors Low Temperature(LT) Solution-Processed High Mobility Subthreshold Swing(SS) Active Layer High Field-Effect Mobility Channel Length Semiconductor Device Gate Dielectric High Density Plasma Gate Pulse Need For Hole Mobility Pulsed Laser Ablation(PLA) Electrical Characteristics Gate Insulator Highly Stable Positive Bias Transparent Electronics P-Type Characteristics Flexible Display Large-Area Electronics Display Panel Bottom Gate Transistor Characteristics Deep Submicron Indium-Free Turn-On Voltage Threshold Voltage(Vth) Subthreshold Slope(SS) Double Layer Current Efficiency Chemical Vapor Deposited Charge Transfer Contact Configuration Channel Structure Annealing Conditions Defect States Display Device Density Functional Theory Calculations Etching Method Etch-Stop Environmental Parameters Electrical Properties(I-V curve) Highly Reliable Low-Power Microelectronic Devices Nano-Gap Ohmic Contact Resistance Parasitic Capacitance Power Consumption Quantum Dot(QD) Sn-Rich I-V Characteristic(Transport property) Transparent Oxide Semiconductor Ternary Compounds Top-Gate Computationally Efficient Ac Bias Atomic Layer Deposition Bottom Contact Driver Circuit Double-Channel Earth-Abundant Materials Electronic Transport Properties Electrical Performance Highly Conductive High-Speed Operation Inverted Staggered In-Zn-O Liquid Crystal Device 460 Nm Metal Source/Drain(S/D) Next-Generation Oscillating Frequency Precursor Solution P-Type Tin Oxide Resolution Limit Ring Oscillator Spatial Light Modulator(SLM) Tft Array Transfer Process Triple-Layer Transparent Thin Film Transistor(TTFT) Ultra-High Resolution Vertical Channel Voltage Stress Contrast Ratio Charging And Discharging Contact Structure Ac Drive Drain Current Electron Mobility Fabrication Process Elastomeric Substrate Facile Route High Responsivity In-Memory Low Mobility 5 Nm On/Off Ratio Oxide Material Polyimide Substrate Room-Temperature Switching Characteristics Short Time Carrier Concentration A-Igzo Tfts Active Structure Al-Doped Dual-Mode Defect Sites Electronic Structures Guest-Host Hydrogen Diffusion Hall Mobility Memory Applications Novel Material Oxide Deposition Organic Light-Emitting Diodes(OLEDS) Oxygen Vacancies On/Off Current Ratio Pulse Voltage Pulse Shape P-Channel Reliability Test Reliable Design Sputtering Method Stable Operation Self-Aligned Thin-Film Phototransistors(TFPT) Top Contact Channel Layer Complementary Metal-Oxide-Semiconductor(CMOS) Driving Method Device Performance Defect Passivation Fabrication And Characterization Gate Bias High Temperature Key Factor Interface Trap Igzo Semiconductor In-Zn-Sn-O Indium Zinc Oxide Light Shutter Off-State Current Plasma-Enhanced Chemical Vapor Power Integrated Circuits P-Type Oxide Semiconductor Short-Pulsed Cost-Effective Fabrication Aluminum Oxide A-Ingazno Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Display Applications External Bias Fingerprint Sensor Hydrogen Impurity Image Sensor N-Type And P-Type Oxide Electronics Photo-Stability Photo-Responsive P-Type And N-Type Pulsed Current Solution-Processable First Stokes(S1) Tri-Layer Tin (Iv) Oxide Consumer Electronics Applied Electric Field Active Devices Bias Stress Binary Oxide Back-Channel Etching Holographic Display Hydrogen Atoms High Photoresponsivity Low Annealing Temperature Laser Lift-Off Layered Oxide Channel Width Photo-Generated Holes Stop Layer Stress Conditions Specific Detectivity Transparent Semiconductor Tin Oxide Films Channel Current Analysis Method Bias Stability Diffusion Barrier(DB) Flexible Substrate Film Formation Gate Driver High Uniformity High Concentration K-Doped Indium Zinc Tin Oxide(IZTO) Low-Cost High-Throughput Screening Minimum Power Manufacturing Processes Performance Parameters Persistent Photoconductivity (Ppc) Standard Deviation(STD) Semiconductor Thin Film Transient Currents Thermal Annealing