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Journal
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2025 |
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Park Honghwi Laser and Photonics Reviews, v.19, no.19, pp.1-9 |
1 |
원문
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Journal
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2024 |
β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 |
4 |
원문
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Journal
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2019 |
2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 |
122 |
원문
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Conference
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2012 |
Continuous Wave Terahertz Generation using Dual-mode Laser and InGaAs-based Photomixers Grown by Molecular Beam Epitaxy System at Low Temperature
Hyunsung Ko International Conference on Molecular Beam Epitaxy (MBE) 2012, pp.1-1 |
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Journal
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2010 |
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
Choi Sungyoul Journal of the Korean Physical Society, v.57, no.61, pp.1769-1772 |
0 |
원문
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Conference
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2009 |
Effects of Microstructure of Low Temperature Grown GaAs Films on the Properties of Terahertz Wave Detection
Jeong Se Young International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2009, pp.1-2 |
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Journal
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2009 |
Annealing-induced Modifications of Carrier Dynamics andPlasmon-phonon Coupling in Low-temperature-grown GaAs
김창섭 Journal of the Korean Physical Society, v.55, no.2, pp.630-635 |
1 |
원문
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Conference
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2009 |
Characterization of Low-Temperature Molecular Beam Epitaxial Grown GaAs Films for Terahertz Wave Generation and Detection
정세영 MRS Meeting 2009 (Spring), pp.1-1 |
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Journal
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2007 |
Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
이상준 Journal of the Korean Physical Society, v.51, no.3, pp.1027-1031 |
6 |
원문
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Journal
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2007 |
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Jongmin Lee Journal of the Korean Physical Society, v.50, no.3, pp.871-874 |
2 |
원문
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Journal
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2007 |
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
Sungyoul Choi Journal of the Korean Physical Society, v.50, no.3, pp.844-847 |
4 |
원문
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Journal
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2006 |
Self-Alignment of Self-Assembled InAs Quantum Dots
홍성의 Journal of Crystal Growth, v.286, no.1, pp.18-22 |
4 |
원문
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Journal
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2004 |
Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications
Jin Soo Kim ETRI Journal, v.26, no.5, pp.475-480 |
14 |
원문
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