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Journal
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2020 |
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing
Woo Jiyong IEEE Electron Device Letters, v.41, no.2, pp.232-235 |
24 |
원문
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Journal
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2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
3 |
원문
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Journal
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2014 |
Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals
백태종 ACS Nano, v.8, no.1, pp.797-806 |
117 |
원문
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Journal
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2014 |
Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals
Sunghoon Hong ACS Nano, v.8, no.1, pp.797-806 |
117 |
원문
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Journal
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2013 |
Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient
Choi Won Chul Journal of Nanoscience and Nanotechnology, v.13, no.12, pp.7801-7805 |
6 |
원문
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Journal
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2013 |
Liquid Crystal Devices Incorporating Transparent Zn, Sn Co-Doped In2O3 Electrodes Prepared by Direct Inkjet-Printing of Nanosized Particles
박경원 Journal of Physics D : Applied Physics, v.46, no.14, pp.1-6 |
11 |
원문
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Journal
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2010 |
Effects of Thermal Annealing on the Efficiency of Bulk-Heterojunction Organic Photovoltaic Devices
정진욱 Current Applied Physics, v.10, no.3 SUPPL., pp.S520-S524 |
9 |
원문
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Journal
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2010 |
In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
최철종 Materials Transactions, v.51, no.4, pp.793-798 |
3 |
원문
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Journal
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2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 |
6 |
원문
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Journal
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2009 |
Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film
최철종 Microelectronics Reliability, v.49, no.4, pp.463-465 |
2 |
원문
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Journal
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2008 |
The Fabrication of Bolometric IR Detector for Glucose Concentration Detection
최주찬 센서학회지, v.17, no.4, pp.250-255 |
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원문
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Journal
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2007 |
Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics
Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25 |
0 |
원문
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Journal
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2007 |
Thickness Effect of a Ge Interlayer on the Formation of Nickel Silicides
Choi Chel-Jong Journal of the Electrochemical Society, v.154, no.9, pp.H759-H763 |
11 |
원문
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Journal
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2007 |
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3 |
17 |
원문
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Journal
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2007 |
Thermal Annealing Effects on the Electrical Characteristics of the Back Interface in Nano-silicon-on-insulator Channel
조원주 Applied Physics Letters, v.90, no.14, pp.1-3 |
9 |
원문
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