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Journal
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2025 |
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4 |
0 |
원문
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Journal
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2022 |
Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
Kang Soo Cheol Current Applied Physics, v.39, pp.128-132 |
1 |
원문
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Journal
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2017 |
A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor
Doohyung Cho Journal of the Korean Physical Society, v.71, no.3, pp.150-155 |
5 |
원문
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Journal
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2017 |
Hopping Conduction and Random Telegraph Signal in an Exfoliated Multilayer MoS2 field-effect Transistor
리리준 Nanotechnology, v.28, no.7, pp.1-7 |
6 |
원문
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Journal
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2013 |
Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations
Ryu Min Ki Solid-State Electronics, v.89, pp.171-176 |
21 |
원문
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Journal
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2013 |
Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures
Bae Sung-Bum Microelectronic Engineering, v.109, pp.10-12 |
6 |
원문
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Journal
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2007 |
Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
조원주 Journal of the Korean Physical Society, v.51, pp.S313-S317 |
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Journal
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2007 |
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3 |
17 |
원문
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Journal
|
2007 |
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
Jun Myung Sim Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 |
5 |
원문
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Conference
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2006 |
Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics
Park Kun Sik IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072 |
3 |
원문
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Journal
|
2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
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Journal
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2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
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Conference
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2006 |
New Analysis on the Interface Trap States at Schottky Contact
Jun Myung Sim International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2 |
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