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Journal
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2020 |
Exploiting Defective RRAM Array as Synapses of HTM Spatial Pooler with Boost-factor Adjustment Scheme for Defect-tolerant Neuromorphic Systems
Woo Jiyong Scientific Reports, v.10, pp.1-8 |
13 |
원문
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Journal
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2020 |
Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process
Yun Hye Won Current Applied Physics, v.20, no.2, pp.288-292 |
19 |
원문
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Journal
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2018 |
Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications
연창봉 Small, v.14, no.2, pp.1-10 |
23 |
원문
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Journal
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2011 |
Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory
정후영 Applied Physics A : Materials Science & Processing, v.102, no.4, pp.967-972 |
30 |
원문
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Journal
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2011 |
Critical Role of Top Interface Layer on the Bipolar Resistive Switching of Al/PEDOT:PSS/Al Memory Device
김종윤 Current Applied Physics, v.11, no.2 SUPPL., pp.e35-e39 |
7 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Hu Young Jeong Nano Letters, v.10, no.11, pp.4381-4386 |
554 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Kim Jongyun Nano Letters, v.10, no.11, pp.4381-4386 |
554 |
원문
|
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Journal
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2010 |
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
정후영 Advanced Functional Materials, v.20, no.22, pp.3912-3917 |
179 |
원문
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Journal
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2010 |
Flexible Resistive Switching Memory Device Based on Graphene Oxide
홍설기 IEEE Electron Device Letters, v.31, no.9, pp.1005-1007 |
172 |
원문
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Journal
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2010 |
Direct Observation of Microscopic Change Induced by Oxygen Vacancy Drift in Amorphous TiO2 Thin Films
Hu Young Jeong Applied Physics Letters, v.97, no.4, pp.1-3 |
43 |
원문
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Journal
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2010 |
Comprehensive Modeling of Resistive Switching in the Al/TiOx/TiO2/Al Heterostructure Based on Space-Charge-Limited Conduction
김성호 Applied Physics Letters, v.97, no.3, pp.1-3 |
86 |
원문
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Journal
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2010 |
Bipolar Resistive Switching in Amorphous Titanium Oxide Thin Film
Hu Young Jeong Physica Status Solidi (RRL), v.4, no.1-2, pp.1-3 |
60 |
원문
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Journal
|
2010 |
Bipolar Resistive Switching Characteristics of Poly(3,4-Ethylene-Dioxythiophene): Poly(Styrenesulfonate) Thin Film
Hu Young Jeong Current Applied Physics, v.10, no.1, pp.46-49 |
33 |
원문
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|
Journal
|
2009 |
Microscopic Origin of Bipolar Resistive Switching of Nanoscale Titanium Oxide thin Films
정후영 Applied Physics Letters, v.95, no.16, pp.162108-1-162108-3 |
113 |
원문
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|
Conference
|
2008 |
Nonvolatile Resistive Switching Memory Devices using Organic- Inorganic Hybrid Superlattices with Monolayer Precision
Sung-Yool Choi Molecular Electronics 2008, pp.1-1 |
|
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Journal
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2008 |
Structure Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications
유리은 IEEE Electron Device Letters, v.29, no.4, pp.331-333 |
101 |
원문
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