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Journal
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2017 |
A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor
Doohyung Cho Journal of the Korean Physical Society, v.71, no.3, pp.150-155 |
5 |
원문
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Journal
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2013 |
Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures
Bae Sung-Bum Microelectronic Engineering, v.109, pp.10-12 |
6 |
원문
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Journal
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2009 |
Impact of Sn/Zn Ratio on the Gate Bias and Temperature-Induced Instability of Zn-In-Sn-O thin Film Transistors
Ryu Min Ki Applied Physics Letters, v.95, no.17, pp.173508-1-173508-3 |
105 |
원문
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Journal
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2009 |
Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3 |
60 |
원문
|
|
Journal
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2009 |
High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach
Ryu Min Ki Applied Physics Letters, v.95, no.7, pp.072104-1-072104-3 |
119 |
원문
|
|
Journal
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2007 |
Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
조원주 Journal of the Korean Physical Society, v.51, pp.S313-S317 |
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Journal
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2007 |
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3 |
17 |
원문
|
|
Journal
|
2007 |
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
Jun Myung Sim Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 |
5 |
원문
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|
Conference
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2006 |
Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics
Park Kun Sik IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072 |
3 |
원문
|
|
Journal
|
2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
|
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Journal
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
|
|
Journal
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2003 |
1/f noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under Fowler-Nordheim stress
Young Joo Song IEEE Transactions on Electron Devices, v.50, no.4, pp.1152-1156 |
12 |
원문
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