Subjects :
Bias stability
논문 검색결과
| Type |
Year |
Title |
Cited |
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Journal
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2018 |
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
Yang Jong-Heon IEEE Electron Device Letters, v.39, no.4, pp.508-511 |
41 |
원문
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Conference
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2015 |
The Effect of Post-Annealing on Bias Stability of InOx/ZnO Superlattice Thin Film Transistors Grown by Plasma Enhanced Atomic Layer Deposition
Lee Hwanjae Asian-European International Conference on Plasma Surface Engineering (AEPSE) 2015, pp.1-1 |
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Journal
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2011 |
Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
Yang Shinhyuk Applied Physics Letters, v.98, no.10, pp.1-3 |
31 |
원문
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Journal
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2009 |
Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346 |
8 |
원문
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Conference
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2009 |
Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED
Cho Doo-Hee International Meeting on Information Display (IMID) 2009, pp.318-321 |
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Conference
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2009 |
Oxide TFT Structure Affecting the Device Performance
Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388 |
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Journal
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2009 |
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Jaeheon Shin ETRI Journal, v.31, no.1, pp.62-64 |
189 |
원문
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Conference
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2008 |
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628 |
0 |
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Conference
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2008 |
P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors
Cho Doo-Hee Society for Information Display (SID) International Symposium 2008, pp.1243-1246 |
6 |
원문
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Conference
|
2008 |
42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display
Park Sang-Hee Society for Information Display (SID) International Symposium 2008, pp.629-632 |
39 |
원문
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