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Journal
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2025 |
A semipermanently stable, photocrosslinkable graphene colloid: A fresh strategy for fabricating polymer nanocomposites
Park Seung Koo Composites Part A: Applied Science and Manufacturing, v.190, pp.1-9 |
0 |
원문
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Journal
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2024 |
Novel indolocarbazole-based bipolar host materials for fabricating green phosphorescent organic light-emitting diodes with high efficiency and low roll-off
신은주 Dyes and Pigments, v.226, pp.1-6 |
4 |
원문
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Journal
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2024 |
Novel indolocarbazole-based bipolar host materials for fabricating green phosphorescent organic light-emitting diodes with high efficiency and low roll-off
Joo Chul Woong Dyes and Pigments, v.226, pp.1-6 |
4 |
원문
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Journal
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2024 |
Novel indolocarbazole-based bipolar host materials for fabricating green phosphorescent organic light-emitting diodes with high efficiency and low roll-off
성백상 Dyes and Pigments, v.226, pp.1-6 |
4 |
원문
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Journal
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2023 |
Highly stable Mo/Al bilayer electrode for stretchable electronics
Ji Hun Choi Journal of Information Display, v.24, no.2, pp.137-145 |
6 |
원문
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Conference
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2021 |
Highly-stable Stretchable Electrode for High Resolution Wearable Electronics
Ji Hun Choi International Meeting on Information Display (IMID) 2021, pp.1-25 |
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Journal
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2021 |
Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications
권혁진 Advanced Functional Materials, v.31, no.10, pp.1-15 |
36 |
원문
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Journal
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2021 |
Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications
Heqing Ye Advanced Functional Materials, v.31, no.10, pp.1-15 |
36 |
원문
|
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Journal
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2018 |
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
Yang Jong-Heon IEEE Electron Device Letters, v.39, no.4, pp.508-511 |
39 |
원문
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Other
|
2016 |
Highly Stable Oxide Semiconductor TFTs deposited by High Density Plasma
Cho Sung Haeng 중국 BOE, pp.1-46 |
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Journal
|
2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 |
37 |
원문
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Conference
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2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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|
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Conference
|
2014 |
33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors
Cho Sung Haeng Society for Information Display (SID) International Symposium 2014, v.45, no.1, pp.473-475 |
5 |
원문
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Conference
|
2011 |
Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors
Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116 |
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Journal
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2011 |
Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material
Oh Himchan Applied Physics Letters, v.99, no.2, pp.1-3 |
36 |
원문
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Journal
|
2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4 |
7 |
원문
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Conference
|
2009 |
Stable Efficiency Roll-Off in Blue Phosphorescent Organic Light-Emitting Diodes using a Mixed Host Structure
Lee Jonghee International Meeting on Information Display (IMID) 2009, pp.1-4 |
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Conference
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2009 |
Effect of Channel/Insulator Interface Formation Process on the Oxide TFT Performance
Park Sang-Hee Society for Information Display (SID) International Symposium 2009, pp.276-279 |
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Conference
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2008 |
Highly Stable ZnO TFT: Effect of Substrate Buffer Layer
Park Sang-Hee The Electrochemical Society (ECS) Meeting 2008, pp.297-302 |
0 |
원문
|
|
Conference
|
2005 |
A 26.4 GHz Phase Locked Oscillator for Space Application
Shin Dong Hwan Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
3 |
원문
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