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Conference
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2025 |
Fabrication of PPLNOI waveguides via in-situ poling monitoring and optimized dry etching conditions for efficient frequency conversion
Tetiana Slusar Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) 2025, pp.1-1 |
0 |
원문
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Conference
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2025 |
Fabrication of PPLNOI waveguides via in-situ poling monitoring and optimized dry etching conditions for efficient frequency conversion
Hong-Seok Kim Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) 2025, pp.1-1 |
0 |
원문
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Journal
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2024 |
Fabrication of low-loss symmetrical rib waveguides based on x-cut lithium niobate on insulator for integrated quantum photonics
Hong-Seok Kim ETRI Journal, v.46, no.5, pp.783-792 |
3 |
원문
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Journal
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2023 |
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Min Byoung-Gue ETRI Journal, v.45, no.1, pp.171-179 |
5 |
원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Conference
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2017 |
Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
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Conference
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2016 |
Backside Process of AlGaN/GaN HEMT on SiC with Optimized Via-Hole Etching Conditions
Min Byoung-Gue International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure
Kim Zin-Sig International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Journal
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2015 |
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
Min Byoung-Gue Journal of the Korean Physical Society, v.67, no.4, pp.718-722 |
2 |
원문
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Journal
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2002 |
Characterization of Via Etching in CHF3/CF4 Magnetically Enhanced Reactive Ion Etching Using Neural Networks
Kwon Sung-Ku ETRI Journal, v.24, no.3, pp.211-220 |
10 |
원문
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