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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Journal
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2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
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원문
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Conference
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2019 |
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2019, pp.618-619 |
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Journal
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2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
김정길 Solid-State Electronics, v.152, pp.24-28 |
10 |
원문
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Conference
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2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Kim Zin-Sig 대한전자공학회 학술 대회 (하계) 2018, pp.195-198 |
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Conference
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2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Conference
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2017 |
Fabrication of Schottky Barrier Diodes on AlGaN/GaN Heterostructures on CVD Diamond Substrate
Kim Zin-Sig Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-1 |
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Journal
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2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
3 |
원문
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Journal
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2007 |
Influence of a Strained AlGaN Overlayer on the GaN Matrix near AlGaN/GaN Heterointerfaces
이상준 Journal of the Korean Physical Society, v.51, no.3, pp.1050-1054 |
6 |
원문
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Journal
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2006 |
Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Jing Han Chen Journal of the Korean Physical Society, v.48, no.6, pp.1539-1543 |
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Journal
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2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
원문
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