ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Heterojunction Bipolar Transistors(HBTs) Compound Semiconductor Components Technology T-Shaped Gate Gate Recess Maximum Oscillation Frequency Via-Hole Sic Substrate Gan-Based Breakdown Voltage(BDV) W-Band Gate Length Fabrication Process Electrical Properties(I-V curve) Two-Step Silicon Nitride Inp Hbt Metamorphic High Electron Mobility Transistor(mHEMT) Microwave Monolithic Integrated Circuits(MMIC) Power Amplifiers(PAs) 60 Ghz Mim Capacitor Dry Etching Rf Characteristics X-Band Dc Characteristics Inductively-Coupled Plasma(ICP) Etching Conditions Self-Aligned Rf Performance Microwave Integrated Circuit Field Plate 3 V Dielectric Layer Surface Treatments 30 Ghz 40 Gb/S Diode Ideality Factor Electrical Characterization Next-Generation Recessed Gate 6 Ghz Etching Process Gate Dielectric Gan Hemt Devices National Defense Output Power Smart Lighting And Gate Platform Development Transconductance (Gm) Bi-Layer Device Performance Low Noise Amplifier(LNA) Light Sources Normally-Off Schottky Diode Transimpedance Amplifier(TIA) Epitaxial Layer Gan-On-Sic Hemt Mechanical Stress Gate Resistance Inp/Ingaas Heterojunction Nitride Layer Enhancement-Mode Gas Mixture Minimum Noise Figure Double Heterojunction Bipolar Transistor(DHBT) Optical Link Optical Transmission Recess Depth Sic Device Contact Region Dc Output Front-Side Radiation Hardness 28 Ghz Wet Chemical Etching Device Degradation Oxygen Plasma Treatment Transmission System Algan/Gan Mis-Hemt Creative Technology Depletion Mode Etch Depth Gaas Heterojunction Bipolar Transistor Metal Contact Mmic Power Amplifier Noise Level Plasma-Enhanced Chemical Vapor Deposition(PECVD) Proton Radiation Saturation Current Transfer Characteristics Threshold Voltage Shift S-Band Citric Acid Gate Leakage Current Gate Foot Ingap/Gaas Heterojunction Off-State 5 Nm Icp Etching Metal-Insulator-Semiconductor(MIS) Rf Power Sensor Node Double-Deck Etch Rates Frequency Range Ka-Band Output Characteristics Performance Degradation Schottky Contacts Wet Etching 18 Ghz Atomic Force Microscope(AFM) Broadband Amplifier Current Density Carrier Mobility Algan/Gan-On-Si Bonding Process Capacitive Coupling Coulomb Scattering Design And Fabrication De-Multiplexer Diode Characteristics Degradation Mechanism Electroplated Cu Electrochemical Reaction(ECR) Frequency Tuning Range Etch Selectivity Gate Electrode Hot Electrons Heterostructure Field Effect Transistors Metal-Semiconductor Interface Millimeter Wave(mmWave) Molecular Beam Epitaxy(MBE) Negative Resistance Noise Characteristics Ohmic Contact Oscillator Circuit O 3 Power Hemt Platform-Based Parasitic Components Post Amplifier(PA) 70 Ghz Target Current I-V Characteristic(Transport property) Transport Characteristics Transmission Electron Microscopy(TEM) Electrode Process Wafer Level Package Voltage Swing Water Pressure Thermal Conduction Control Gate Asynchronous Processor Junction Temperature Contact Reliability Conversion Loss Carrier Transport Capping Layer Etch Profile Gate Bias Stress Gan Epilayer Gaas Mmic High Performance Ingap/Gaas Hbt Nitride Passivation Noise Performance Oscillating Frequency On-Resistance Parallel-Plate Resistive Mixer Single-Ended Small Signal Gain X-Ray Photoelectron Spectroscopy (Xps) Tuning Diode Electrical Measurements Temperature Range Transmission Line Model Semiconductor Heterostructure Wire Bonding Treatment Process Silicon Heterojunction Atomic Force Microscopy (Afm) Cleaning Process Device Layout Drain Electrode Gan Power Device Diode Parameters Etching Technique Flip-Chip Bonding High Temperature Storage Lumped Elements Microstrip Line Metal Deposition Mesa Structure Passivation Layer Process Technique Quality Improvement Subthreshold Slope(SS) Trapped Charge Technology Infrastructure Tetramethylammonium Hydroxide Thermal Stability(TGA) Etching Rate Simplified Circuit Model Through Silicon Vias(TSV) Thermal Stress Top Electrode 39 Ghz 110 Ghz Atomic Layer Deposition Method Active Region Buffer Layer Chemical Mechanical Polishing(CMP) Compressive Stress Carrier Transfer Carrier Concentration Device Fabrication Equivalent Circuit Model(ECM) Etching Solution Floating Gate Gan Hemt Technology Gan Power Amplifier Gaas Process Fine Pitch Bump Interface Quality Input And Output Infrastructure Support Image Rejection Mixer Input Signal Metal Layer Non-Uniformity Plasma Process Pulsed Mode Si Wafer Single-Layer Saturation Drain Current Ultralow Power(ULP) Surface Treatment Method Three-Layered Carbon-Doped Channel Layer Current Status Device Characteristics Device Properties Gate Voltage Gan Device Gan Capping Failure Analysis(FA) F Max Key Device Low-Power Operation Lossy Transmission Line Metal Interface Native Oxide Layer Optical Communication Systems Passivation Film Open Technology Radar System Stress-Free 20 Nm Technical Development T-Gate Selective Area Contact Degradation Capacitance-Voltage Conversion Gain Comparative Study Digital Etch Degradation Factor Eye Opening Electron Beam Lithography Frequency Characteristics Insertion Layer Operation Test Process Technology Physical Model Plasma Damage Reference Device Surface Characteristics Sheet Resistance Spurious Suppression 94 Ghz Wideband Operation Thermal Performance Semiconductor Process Iii-Nitrides Limiting Amplifier Algan/Gan Heterostructure Current Collapse Cross Section Common-Source Double Plasma Device Reliability Down Converter Electrical Characteristics Fiber Optic Gate Insulator Frequency Multiplier High Output Inp Dhbt Insulating Layer Image Signal Inalas/Ingaas Mhemt Low Phase Noise Metal Diffusion Off Current Off-Chip Ohmic Electrode On-Wafer Pulsed Power Power Amplifier Mmic Structural Parameters Stress Effects Stress Conditions Stress Engineering Tensile Stress Three-Terminal Temperature Dependence Scaling Effect Sic Power Devices State Performance Via Etch Trap Effect 3.5 Ghz Air-Bridge Back Grinding Current Gain Cutoff Frequency Current-Voltage Characteristics Channel Current CF 4 Different Structures Drain Voltage Deep Reactive Ion Etching Defect-Free Electron Beam Exposure Fluoride-Based Plasma Treatment Electrochemical Potential Fully Integrated High-Temperature Operation High Power Density Lithography Process Intelligent Vehicle Microwave Characteristics Manufacturing Processes Measuring Channel Output Voltage Return Loss(RL) Recess Etch Self-Heating Effect(SHE) Source Region Storage Test 9.5 GHZ Thermoelectric Device Wide Bandwidth Dual Gate(DG) Thick Photoresist Transistor Devices