ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts T-Shaped Gate Power Amplifiers(PAs) W-Band Gan-Based Components Technology Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Gate Recess Metamorphic High Electron Mobility Transistor(mHEMT) Compound Semiconductor Gate Length Breakdown Voltage(BDV) Maximum Oscillation Frequency Two-Step Drain Current 60 Ghz Dc Characteristics Device Performance Noise Characteristics 30 Ghz Rf Characteristics Minimum Noise Figure Fabrication Process Frequency Range Gate Resistance Small Signal Gain Sic Substrate Threshold Voltage Shift 6 Ghz S-Band Ghz Band Gate Dielectric Gan Hemt Technology Rf Performance T-Gate 94 Ghz Field Plate High Gain Dry Etching Next-Generation Gate Width Diode Ideality Factor Mmic Power Amplifier Inductively-Coupled Plasma(ICP) Low Temperature Cofired Ceramic(LTCC) Gan Hemt Devices 5 Nm National Defense 110 Ghz Transconductance (Gm) Platform Development Power Characteristics Ka-Band Normally-Off Schottky Diode Gan-On-Sic Hemt Conversion Gain Nitride Layer Gate Insulator Maximum Frequency Silicon Nitride Gas Mixture Dielectric Layer 3 V 9.5 GHZ 28 Ghz Power Gain Thermal Behavior Radar Sensor Current Density 5g Base Station Power Amplifier Mmic Antenna Gain 2 Mm Recess Depth Carrier Mobility Gan Fet Proton Irradiation Dielectric Resonator Antenna(DRA) Dc Output Contact Region Lithography Process Drain Voltage Schottky Barrier Diode(SBD) Enhancement-Mode Wet Chemical Etching Microwave Characteristics Standard Deviation(STD) Q-Band Oxygen Plasma Treatment Frequency Doubler Solid State Power Amplifier Input Power Gaas Substrates Power Added Efficiency(PAE) Measurement System Drain Saturation Current Etch Depth Noise Level Recessed Gate Metal Contact Single-Ended Co-Fired Ceramics Driver Amplifier Depletion Mode Ingaas Channel Gate Foot Gan Power Device Etching Process Passivation Layer Smart Lighting Citric Acid Aperture Coupled Rf Power Metal-Insulator-Semiconductor(MIS) Etching Conditions Sensor Node Icp Etching Device Fabrication Automotive Radar Systems Via-Hole Etch Rates Output Characteristics 5.8 Ghz Wet Etching Double-Deck E-Beam Lithography Mim Capacitor Light Sources Performance Degradation Silicon Substrate Indium Content Optical Communications 18 Ghz Epitaxial Layer Threshold Current Target Current Nanometer-Scale Standard Single-Mode Fiber Electrical Properties(I-V curve) Gate Electrode Linear Energy Transfer Electrode Process Laser Transmitter Millimetre-Wave Ground Planes(GP) Stress Measurement 100 W-Class Heterostructure Field Effect Transistors Electrochemical Reaction(ECR) Semiconductor Technology Pull Test Satellite Communication System Large Size Degradation Mechanism Matching Network System In Package(SIP) Ohmic Contact Coulomb Scattering Power Hemt Compact Size Gate Coupling Control Gate Treatment Process Mmic Amplifiers Resistive Mixer Balanced Type Noise Performance Bilayer Resist Gate Operation Asynchronous Processor Third-Order Intercept Three-Stage Down-Converter 300 Ghz 55 Ghz Plasma-Enhanced Chemical Vapor Deposition(PECVD) Base Station Applications Patch Resonator Gate Fabrication Surface Wave Bias Circuit High Performance Radiation Resistance High-Quality Electrical Characterization Gan Transistor Gaas Mmic Semiconductor Heterostructure Conversion Loss Wide Beamwidth Channel Mobility Coupling Effects Silicon Carbide(3C-SiC) Ghz Vco Proton Radiation Bandwidth Enhancement High Signal Gate Leakage Current Operating Temperature Trapped Charge Rf Application Drain Electrode Cost-Effective Off-State Etching Technique Shunt Capacitors Applied Physics Subthreshold Swing(SS) Device Layout Superluminescent Diodes(SLDs) Continuous Wave(CW) Etching Rate Double-Gate(DG) Total Ionizing Dose Gold Plating Floating Gate Hydrogen Silsesquioxane Amplifier Design Three-Layered Ultralow Power(ULP) Pulsed Mode On/Off Current Ratio And Gate Gate Control Temperature Difference Output Matching Directly Modulated Gallium Nitride (Gan) Image Rejection Mixer Input And Output Single-Layer Total Current Etching Solution Fin Width Atomic Layer Deposition Method Input Signal Antenna Structure Non-Uniformity Ltcc Substrate Distribution Analysis Plasma Process Gan Power Amplifier Central Region Selective Area Gate Voltage Current Status Width Effects Power Performance Linear Extrapolation Sin Passivation Dynamic On-Resistance Load-Pull Device Characteristics Channel Layer Key Device Current Consumption Complementary Metal-Oxide-Semiconductor(CMOS) 20 Nm Broad Bandwidth Gan On Silicon Metal Interface Radar Image Rf Choke Bicmos Technology Image Sensor Mm-Wave Applications Matching Circuit Maximum Output Power Insertion Layer External Cavity Laser Degradation Factor Surface Characteristics Wideband Operation Temperature Distribution Characteristics Measurement And Analysis Comparative Study Reference Device Main Patch High Linearity Electron Beam Lithography 77-Ghz Automotive Radar Single-Gate(SG) Process Technology Dispersion Power Penalty Fin-Gate Gate Capacitance Improved Model Transmitter Optical Sub-Assembly Wlan Applications Millimeter-Wave Band Different Modes Spurious Suppression Input Matching Radar Applications Double Plasma Millimeter-Wave Monolithic Integrated Circuits Frequency Multiplier Sige Hbt Image Signal Ohmic Electrode On-Wafer Off-Chip Gan Hmet Inalas/Ingaas Mhemt State Performance Output Power Density Three-Terminal Active Devices Temperature Dependence X-Band Applications Reactive Ion Etching(RIE) Low Noise Amplifier (Lna) Bragg Reflector High Output Channel Properties Temperature Characteristics Metal Pattern Insulating Layer High Power Devices Patch Antenna High Efficiency Power Amplifier Pulsed Power Single Supply Displacement Damage Common-Source Silicon-Germanium(SiGe) Measuring Channel Recess Etch High Power Density 16 Nm Electrochemical Potential High Frequency(HF) 3.5 Ghz Signal Leakage Antenna Bandwidth Fluoride-Based Plasma Treatment Fifth Generation(5G) Intelligent Vehicle Radiation Hardness Manufacturing Processes Large Area Front-Side Dual Gate(DG) Electron Beam Exposure Low-Cost Channel Current Current Gain Cutoff Frequency Return Loss(RL) Broadband Mmic Dc Biasing Trans-Impedance Amplifier(TIA) Tunable Lasers Transistor Devices Current-Voltage Characteristics Improved Performance Surface Treatments Performance And Reliability