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Schottky Barrier Diode(SBD) Normally-Off Etching Conditions Dry Etching Algan/Gan Heterostructure Deep Traps Algan/Gan-On-Si Low-Rate Plasma Treatment Nonvolatile Memory Devices Reverse Leakage Current Oxygen Vacancies Channel Layer Liquid Precursor Current Collapse Gate Recess Recess Depth Etch Rates High Efficiency Non-Recessed Oxide Semiconductor Power Transistor Plasma-Enhanced Ald Surface Passivation Fingerprint Sensor Device Size Light-Sensitive Mesa Etching Reverse Bias Various Conditions Breakdown Voltage(BDV) Channel Width Electrical Characteristics Efficiency And Power High Electron Mobility Transistor(HEMT) Highly Stable Low Onset Voltage P-Type Si-Based Stop Layer Treatment Effects Dielectric Layer Enhancement-Mode Gan Heterostructures Lift-Off Process On-State Current 16 Nm Shallow Traps Smooth Morphology Diethyl Zinc Gan Mis-Hemt Etch-Stop Low Leakage Current MOS-HEMT Power Density Turn-On Threshold Voltage Trap Charges Visible Light Forward Current Fine Control Atomic Layer Deposition Gate Fabrication Gate Leakage High Performance Mixed Oxides Simple Structure Oxide Etch Oxide Field Recessed Gate STRETCHABLE ELECTRONICS Transfer Characteristics Etching Process Etching Rate Gate Dielectric Inductively-Coupled Plasma(ICP) Memory Window Mixing Ratio 900 V Off-State Leakage Quantitative Description Oxide-Free Room-Temperature Subthreshold Swing(SS) Semiconductor Device Turn-On Voltage 5 Nm Floating Gate All-Oxide Ald Method And Gate Gan Diode Indium Oxide Thin Films Low Damage Oxide Thin-Film Transistors On/Off Current Ratio Reverse Recovery Charge Thermal Oxidation Field-Effect Mobility Al Film Bottom Gate Device Properties Energy-Efficient Gate Bias