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Journal
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2025 |
Demonstration of GaN-Based HEMTs Using Extremely Thin h-BN Passivation Layer and Air Spacer for the RF Performance Improvement
Sungjae Chang Advanced Electronic Materials, v.권호미정, pp.1-10 |
0 |
원문
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Journal
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2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 |
4 |
원문
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Journal
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2024 |
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5 |
3 |
원문
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
이준혁 Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Jeonggil Kim Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
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2020 |
W‐Band MMIC chipset in 0.1‐μm mHEMT technology
Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561 |
6 |
원문
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Journal
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2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9, no.17, pp.1-13 |
6 |
원문
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Journal
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2019 |
DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure
곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322 |
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원문
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Conference
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2016 |
A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Conference
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2007 |
Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel
Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113 |
0 |
원문
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Journal
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2006 |
Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947 |
0 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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