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Journal
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2023 |
Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel
Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 |
2 |
원문
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Journal
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2021 |
Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
Jae-Sik Sim ETRI Journal, v.43, no.5, pp.916-922 |
2 |
원문
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Journal
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2019 |
Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization
Park Kun Sik 전력전자학회논문지, v.24, no.6, pp.411-418 |
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원문
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Journal
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2019 |
Highly Efficient Solution-processed Blue Organic Light-emitting Diodes based on Thermally Activated Delayed Fluorescence Emitters with Spiroacridine Donor
Joo Chul Woong Journal of Industrial and Engineering Chemistry, v.78, pp.265-270 |
15 |
원문
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Journal
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2019 |
Gradual Tuning of the Terahertz Passband using a Square-loop Metamaterial based on a W-doped VO2 Thin Film
Shin Jun Hwan Applied Physics Express, v.12, no.3, pp.1-5 |
13 |
원문
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Journal
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2015 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130 |
2 |
원문
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Journal
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2015 |
High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer
Cho Doo Hyung Japanese Journal of Applied Physics, v.54, no.12, pp.1-5 |
6 |
원문
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Journal
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2013 |
Seebeck Coefficient Characterization of Highly Doped n- and p-Type Silicon Nanowires for Thermoelectric Device Applications Fabricated with Top-Down Approach
Kim Jae Hyeon Journal of Nanoscience and Nanotechnology, v.13, no.9, pp.6416-6419 |
12 |
원문
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Journal
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2013 |
Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar
Kim Sang Gi ETRI Journal, v.35, no.4, pp.632-637 |
8 |
원문
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Journal
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2013 |
Understanding the influence of doping in efficient phosphorescent organic light-emitting diodes with an organic p–i–n homojunction
Changhun Yun Organic Electronics, v.14, no.7, pp.1695-1703 |
22 |
원문
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Conference
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2013 |
A Novel Super-Junction Trench Gate MOSFET Fabricated Using High Aspect-Ratio Trench Etching and Boron Lateral Diffusion Technologies
Kim Sang Gi International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013, pp.233-236 |
5 |
원문
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Journal
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2012 |
Variation in the Electrical Properties of 100 V/100 a Rated Mesh and Stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for Motor Drive Applications
Na Kyoung Il Journal of the Korean Physical Society, v.60, no.10, pp.1508-1512 |
0 |
원문
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Journal
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2009 |
Control of channel doping concentration for enhancing the sensitivity of ‘top-down’ fabricated Si nanochannel FET biosensors
Park Chan Woo Nanotechnology, v.20, no.47, pp.1-6 |
14 |
원문
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Journal
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2007 |
Ultrasensitive, Label-free, and Real-time Immunodetection using Silicon Field-effect Transistors
Kim Ansoon Applied Physics Letters, v.91, no.10, pp.1-3 |
244 |
원문
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Conference
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2007 |
Harvest of Triplet Excitons in Fluorescence Emission Layer Based on a Wide Band Gap Host of TcTa for Efficient White Organic Light Emitting Diodes
Lee Jeong Ik Organic Light Emitting Materials and Devices XI (SPIE 6655), v.6655, pp.1-4 |
3 |
원문
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Journal
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2007 |
Observation of abrupt first-order metal–insulator transition in Be-doped GaAs
Hyun-Tak Kim Journal of Crystal Growth, v.301-302, pp.252-255 |
4 |
원문
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Journal
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2006 |
High Negative Differential Resistance in Silicon Quantum Dot Metal-Insulator-Semiconductor Structure
Rae-Man Park Applied Physics Letters, v.89, no.15, pp.1-3 |
14 |
원문
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Journal
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2006 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Lee Seung-Yun Solid-State Electronics, v.50, no.3, pp.333-339 |
4 |
원문
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Journal
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2003 |
단일막에 의한 고효율 백색 OLED
Young-Wook Ko Thin Solid Films, v.426, no.1-2, pp.246-249 |
66 |
원문
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