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Journal
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2018 |
An Efficient Architecture of In-Loop Filters for Multicore Scalable HEVC Hardware Decoders
Kim Hyun Mi IEEE Transactions on Multimedia, v.20, no.4, pp.810-824 |
8 |
원문
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Journal
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2017 |
80 μW/MHz, 850 MHz Fault Tolerant Processor with Fault Monitor Systems
Han Jin Ho Journal of Semiconductor Technology and Science, v.17, no.5, pp.627-635 |
1 |
원문
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Conference
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2016 |
Reduced Complexity Single Core based HEVC Video Codec Processor for mobile 4K-UHD Applications
Sukho Lee International Conference on Consumer Electronics (ICCE) 2016 : Berlin, pp.97-98 |
10 |
원문
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Conference
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2010 |
Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
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Journal
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2007 |
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892 |
4 |
원문
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Journal
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2007 |
A Design and Performance of 4-Parallel MB-OFDM UWB Receiver
Cheol-Ho Shin IEICE Transactions on Communications, v.E90-B, no.3, pp.672-675 |
10 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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Conference
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2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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Journal
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2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
원문
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
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