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Journal
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2024 |
Replicating the Bright-Light Therapy of Seasonal Affective Disorder Using Dual-Gate Dielectric Synaptic Transistors: An Exploration of Neuromorphic Computing Approaches
Jaehee Lee ACS APPLIED ELECTRONIC MATERIALS, v.6, no.3, pp.1904-1911 |
1 |
원문
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Journal
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2018 |
High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer
임재갑 Solid-State Electronics, v.140, pp.134-138 |
13 |
원문
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Journal
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2018 |
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 |
22 |
원문
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Journal
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2016 |
Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire
Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 |
6 |
원문
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Conference
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2016 |
A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
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Journal
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2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133 |
21 |
원문
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Journal
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2013 |
Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
최민섭 Nature Communications, v.4, pp.1-7 |
602 |
원문
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Journal
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2012 |
High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory
Kang-Jun Baeg Advanced Functional Materials, v.22, no.14, pp.2915-2926 |
204 |
원문
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Journal
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2011 |
Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor
Oh Himchan Applied Physics Letters, v.98, no.3, pp.1-3 |
98 |
원문
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Journal
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2010 |
Nonvolatile Memory Organic Field Effect Transistor Induced by the Steric Hindrance Effects of Organic Molecules
Jung Mi Hee Journal of Materials Chemistry, v.20, no.37, pp.8016-8020 |
25 |
원문
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Journal
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2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94, no.22, pp.1-4 |
109 |
원문
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Journal
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2009 |
Impact of Sn/Zn Ratio on the Gate Bias and Temperature-Induced Instability of Zn-In-Sn-O thin Film Transistors
Ryu Min Ki Applied Physics Letters, v.95, no.17, pp.173508-1-173508-3 |
105 |
원문
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Journal
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2009 |
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Jaeheon Shin ETRI Journal, v.31, no.1, pp.62-64 |
189 |
원문
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Conference
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2008 |
Effect of Deposition Method of Source/Drain Electrode on a Top Gate ZnO TFT Performance
Park Sang-Hee International Meeting on Information Display (IMID) 2008, pp.254-257 |
0 |
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Journal
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2008 |
High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics
Lim Sangchul Thin Solid Films, v.516, no.12, pp.4330-4333 |
5 |
원문
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Journal
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2008 |
Molecular Conductance Switch-On of Single Ruthenium Complex Molecules
Seo Kyoung Ja Journal of the American Chemical Society, v.130, no.8, pp.2553-2559 |
109 |
원문
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