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Journal
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2025 |
Spatial Distribution Control of Room-Temperature Single Photon Emitters in the Telecom Range from GaN Thin Films Grown on Patterned Sapphire Substrates
김혜민 Advanced Quantum Technologies, v.8, no.2, pp.1-6 |
0 |
원문
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Conference
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2024 |
Transfer, Bonding, and Repair of LEDs for µLED Display Fabrication via Simultaneous Transfer and Bonding (SITRAB) Technology
Shin Jungho Society for Information Display (SID) International Symposium 2024, pp.1278-1281 |
1 |
원문
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Journal
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2021 |
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Sungjae Chang Crystals, v.11, no.11, pp.1-10 |
9 |
원문
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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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원문
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Journal
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2017 |
Thermal Conductivity and Thermal Boundary Resistances of ALD Al2O3 Films on Si and Sapphire
Lee Seung Min International Journal of Thermophysics, v.38, no.12, pp.1-10 |
7 |
원문
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Conference
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2017 |
Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate
Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 |
4 |
원문
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Journal
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2016 |
Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire
Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 |
6 |
원문
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Journal
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2016 |
Anti-crossing Effect and Optimization of Waveguide Structure in InGaN/GaN/AlGaN Laser Diode on Sapphire Substrate
Dong Churl Kim Current Applied Physics, v.16, no.3, pp.371-377 |
1 |
원문
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Conference
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2015 |
Effects on Breakdown Voltages of GaN FETs for Field Plate Structures
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.326-329 |
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Journal
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2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
3 |
원문
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Journal
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2013 |
Temperature and Injection Current Dependent Optical and Thermal Characteristics of InGaN-Based Green Large-Area Light-Emitting Diodes
이수현 Physica Status Solidi (A), v.210, no.11, pp.2479-2484 |
5 |
원문
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Journal
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2013 |
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
Bae Sung-Bum ETRI Journal, v.35, no.4, pp.566-570 |
6 |
원문
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Journal
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2007 |
Epitaxial Growth of ZnO Nanowall Networks on GaN/sapphire Substrates
김상우 Applied Physics Letters, v.90, no.3, pp.1-3 |
95 |
원문
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Journal
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2005 |
Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
Chae Byung Gyu Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14 |
107 |
원문
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
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