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Journal
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2016 |
High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
Kim Sang Gi Transactions on Electrical and Electronic Materials, v.17, no.5, pp.301-304 |
0 |
원문
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Conference
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2016 |
Analysis of High-Density Trench Gate MOSFET using SIde-wall Spacer Technology
Kim Sang Gi International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.751-752 |
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Conference
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2016 |
BCD Technology with an integrated Trench Gate MOSFET for Smart Power IC
Won Jong Il International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.745-746 |
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2013 |
Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
Won Jong Il ETRI Journal, v.35, no.4, pp.603-609 |
12 |
원문
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Journal
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2013 |
Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions
Na Kyoung Il ETRI Journal, v.35, no.3, pp.425-430 |
4 |
원문
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Conference
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2013 |
Simulation Studies of Triple Gate Trench Power MOSFETs (TGRMOSs) by Using Modified Resurf Stepped Oxide (RSO) Process with Various Gate Configuration and its Bias Condition
Na Kyoung Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Journal
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2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
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Journal
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2011 |
Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs
Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4 |
0 |
원문
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Journal
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2011 |
Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
Cheong Woo-Seok Journal of Crystal Growth, v.326, no.1, pp.186-190 |
9 |
원문
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Journal
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2010 |
High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique
Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805 |
3 |
원문
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Conference
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2009 |
Oxide TFT Structure Affecting the Device Performance
Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388 |
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Journal
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2006 |
Rare-Earth Gate Oxides for GaAs MOSFET Application
권광호 Applied Surface Science, v.252, no.21, pp.7624-7630 |
4 |
원문
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Journal
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2006 |
Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947 |
0 |
원문
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Journal
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2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
원문
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Journal
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2003 |
A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing
Kim Jongdae IEEE Transactions on Electron Devices, v.50, no.2, pp.378-383 |
5 |
원문
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