Subject

Subjects : Boron nitride

  • Articles (13)
  • Patents (2)
  • R&D Reports (2)
논문 검색결과
Type Year Title Cited Download
Conference 2024 Heat dissipation evaluation of epoxy-boron nitride-based non-conductive films with high thermal conductivity for fine-pitch solder bump interconnection   Oh Jin Hyuk  European Materials Research Society (E-MRS) Meeting 2024 (Fall), pp.1-1
Journal 2021 Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications   문석호  ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 22 원문
Journal 2018 Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates   이창희  Nanotechnology, v.29, no.33, pp.1-8 98 원문
Conference 2018 Field Emission Performance of Boron Nitride Nanotube Emitters According to Vacuum Pressure   Ki Nam Yun  International Vacuum Nanoelectronics Conference (IVNC) 2018, pp.1-2 0 원문
Journal 2018 Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2   무하마드 칸  Chemistry of Materials, v.30, no.3, pp.1011-1016 24 원문
Journal 2017 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors   박재성  Nanoscale, v.9, no.47, pp.18644-18650 34 원문
Journal 2017 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors   Choi Hongkyw  Nanoscale, v.9, no.47, pp.18644-18650 34 원문
Journal 2017 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors   명노준  Nanoscale, v.9, no.47, pp.18644-18650 34 원문
Journal 2014 Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures   Yu Young-Jun  Advanced Functional Materials, v.24, no.32, pp.5157-5163 71 원문
Journal 2014 Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures   강석주  Advanced Functional Materials, v.24, no.32, pp.5157-5163 71 원문
Journal 2014 Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures   이관형  Advanced Functional Materials, v.24, no.32, pp.5157-5163 71 원문
Journal 2013 Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures   이관형  ACS Nano, v.7, no.9, pp.7931-7936 1041 원문
Journal 2013 Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices   최민섭  Nature Communications, v.4, pp.1-7 618 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2021 Fabrication of Semiconductor Devices with Highly Heat Dissipation Property by using hBN and Manufacturing Thereof UNITED STATES
Registered 2021 hBN(Hexagonal Boron Nitride)을 이용한 고방열성 반도체 소자 및 그 제조방법 KOREA
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
Final Report 2020 Development of Extremely High RF Multi-Purpose Device Using Boron Nitride Release Layer and Device Transfer Technique Sungjae Chang
Annual Report 2019 Development of Extremely High RF Multi-Purpose Device Using Boron Nitride Release Layer and Device Transfer Technique Sungjae Chang