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Journal
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2023 |
Effects of barrier metal on high voltage PiN diode electrical characteristics
Won Jong Il 전자공학회논문지, v.60, no.6, pp.24-27 |
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원문
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Journal
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2012 |
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169 |
1 |
원문
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Journal
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519, no.18, pp.6174-6177 |
0 |
원문
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
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Journal
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2010 |
Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801 |
6 |
원문
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Journal
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2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 |
6 |
원문
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Journal
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2008 |
20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3 |
11 |
원문
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Journal
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2007 |
Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
조원주 Journal of the Korean Physical Society, v.51, pp.S313-S317 |
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Journal
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2007 |
Stress Reduction During Phase Change in Ge2Sb2Te5 by Capping TiN Film
Park Young Sam Journal of Materials Science : Materials in Electronics, v.18, no.10, pp.1079-1082 |
6 |
원문
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Journal
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2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
원문
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Journal
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2002 |
Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model
Jang Moon Gyu ETRI Journal, v.24, no.6, pp.455-461 |
40 |
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