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Conference
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2024 |
위상절연체의 전기적 특성 분석
Hwang Tae-Ha 한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
도재원 Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Jung Hyunwook Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
7 |
원문
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Journal
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2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
10 |
원문
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Journal
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161 |
15 |
원문
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Journal
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2015 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130 |
2 |
원문
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Journal
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2014 |
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450 |
3 |
원문
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Journal
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2013 |
Fine‐Pitch Solder on Pad Process for Microbump Interconnection
Bae Hyun-Cheol ETRI Journal, v.35, no.6, pp.1152-1155 |
22 |
원문
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Journal
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2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
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Conference
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2009 |
Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al2O3/ZnO
Yoon Sung Min International Conference on Solid State Devices and Materials (SSDM) 2009, pp.280-281 |
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Journal
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2008 |
Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
Yoon Sung Min Microelectronic Engineering, v.85, no.12, pp.2334-2337 |
11 |
원문
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Journal
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2008 |
Electrical Characterization of ZnO Single Nanowire Device for Chemical Sensor Application
Kim Eunkyoung Journal of Nanoscience and Nanotechnology, v.8, no.9, pp.4698-4701 |
8 |
원문
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Journal
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2007 |
A statistical method for determining intrinsic electronic transport properties of self-assembled alkanethiol monolayer devices
송현욱 Applied Physics Letters, v.91, no.25, pp.1-3 |
23 |
원문
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Journal
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2007 |
Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
Yoon Sung Min Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 |
17 |
원문
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Conference
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2006 |
Electrical Characterization of SWCNT Assembled Devices and its Application to a Chemical Sensor
Park Jonghyurk The Electrochemical Society (ECS) Meeting 2006, pp.1-1 |
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Conference
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2006 |
Electrical Characterization of Semiconducting Nanowire and Its Application to a Chemical Sensor
Kang-Ho Park The Electrochemical Society (ECS) Meeting 2006, pp.231-237 |
0 |
원문
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Journal
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2006 |
Electrical Characterization of Planar Buried Heterostructure SGDBR Wavelength-Tunable Laser Diodes Using the Current Derivative Method
이지면 Journal of the Korean Physical Society, v.49, no.1, pp.233-236 |
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