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Journal
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2025 |
Electrical properties and conduction mechanisms of ε-GaSe films for selector and phase-change memory applications
Lim Soyoung Applied Surface Science, v.682, pp.1-8 |
1 |
원문
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Journal
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2023 |
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
조홍래 ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349 |
7 |
원문
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Journal
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2020 |
Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
Kim Yeriaron Current Applied Physics, v.20, no.12, pp.1441-1446 |
16 |
원문
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Journal
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2018 |
Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications
연창봉 Small, v.14, no.2, pp.1-10 |
23 |
원문
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Conference
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2016 |
A Study on User-level Remote Memory Extension System
Ahn Shin Young International Conference on Advanced Communication Technology (ICACT) 2016, pp.234-239 |
1 |
원문
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Conference
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2016 |
Design of Distributed Memory Integration Framework(DMIf)
Ahn Shin Young International Conference on Information Networking (ICOIN) 2016, pp.343-347 |
3 |
원문
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Conference
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2015 |
Design and Implementation of User-level Remote Memory Extension Library
Ahn Shin Young International Conference on Advanced Communication Technology (ICACT) 2015, pp.739-744 |
4 |
원문
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Conference
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2014 |
Exploring Feasibility of User-level Memory Extension to Remote Node
Ahn Shin Young International Conference on Internet (ICONI) 2014, pp.1-6 |
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Journal
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2014 |
Inkjet-Printed Organic Thin-Film Transistor and Antifuse Capacitor for Flexible One-Time Programmable Memory Applications
Soon-Won Jung Journal of the Korean Physical Society, v.64, no.1, pp.74-78 |
4 |
원문
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Journal
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2011 |
Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application
이승윤 Japanese Journal of Applied Physics, v.50, no.6 PART 2, pp.1-5 |
0 |
원문
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Journal
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2011 |
Antimony Selenide Phase-Change Nanowires for Memory Application
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.11, no.2, pp.1569-1572 |
4 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Kim Jongyun Nano Letters, v.10, no.11, pp.4381-4386 |
547 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Hu Young Jeong Nano Letters, v.10, no.11, pp.4381-4386 |
547 |
원문
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Journal
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2010 |
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
정후영 Advanced Functional Materials, v.20, no.22, pp.3912-3917 |
175 |
원문
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Conference
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2009 |
Antimony Selenide Phase-Change Nanowires for Memory Application
Soon-Won Jung International Conference on Nano Science and Nano Technology (GJ-NST) 2009, pp.454-454 |
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Journal
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2009 |
Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.48, no.9, pp.1-4 |
3 |
원문
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Journal
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2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168 |
23 |
원문
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Conference
|
2009 |
Characterization of P(VDF-TrFE) Copolymer Films with Al2O3 Buffer Layer for Nonvolatile Memory Applications
Jung Soonwon 한국반도체 학술 대회 (KCS) 2009, pp.1-2 |
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Journal
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2009 |
Control of the Thickness and Length of Germanium-Telluride Nanowires Via the Vapor-Liquid-Solid Method
Jung Soonwon Journal of the Korean Physical Society, v.54, no.2, pp.653-659 |
6 |
원문
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Journal
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2008 |
Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
Yoon Sung Min Microelectronic Engineering, v.85, no.12, pp.2334-2337 |
11 |
원문
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Journal
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2008 |
Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications
Lee Seung-Yun Microelectronic Engineering, v.85, no.12, pp.2342-2345 |
5 |
원문
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Journal
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2008 |
Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers
Yoon Sung Min Journal of the Electrochemical Society, v.155, no.6, pp.H421-H425 |
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Journal
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2006 |
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations
Yoon Sung Min IEEE Electron Device Letters, v.27, no.6, pp.445-447 |
112 |
원문
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Journal
|
2005 |
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 |
36 |
원문
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