9GHz, 30W, GaN HEMT 소자, K-대역, High Electron Mobility Transistor, 고전자 이동도 트랜지스터
KSP Keywords
Components technology, compound semiconductor
Funding Org.
한국전자통신연구원
Research Org.
한국전자통신연구원
Project Code
08ZB1500, Establishment of Basis for Compound Semiconductor Components Technology Based on Industrial Demand,
Eun Soo Nam
Abstract
Ⅳ. 연구결과 본 연구과제의 1차년도 주요 연구결과는 다음과 같다. 1. 2GHz 대역 1W, 2W급 InGaP HBT 전력 증폭기 (PA) 모듈 개발 - InGaP HBT Power Tr Cell 제작 완료 - 1W 전력증폭기 칩 제작 완료(P1dB: 32.3 dBm, Pgain: 15 dBm) - 2W 전력증폭기 칩 제작 완료 (P1dB: 33.6 dBm, Pgain: 12 dBm) 2. 이동통신 중계기용 PHEMT PA MMIC 개발 - 수요자 요구사항 정의서 및 사양 도출 - PHEMT 전력소자 시제품 제작 완료 - PHEMT 전력 MMIC 설계 완료 - PHEMT 전력 MMIC 제작 완료 - PHEMT 증폭기 패키지 및 측정 완료 (ETRI Q-마크 획득 및 기술이전) 3. 저잡음 MHEMT 소자 개발 - Noise Figure: 0.6 dB (Frequency: 26 GHz) - Associated gain: 12.8 dB (Frequency: 26 GHz) 4. 범용 PHEMT SPDT 스위치 개발 - 수요자 요구사항 정의서 및 사양 도출 - PHEMT 스위치 시제품 제작 완료 - SPDT 스위치 MMIC 설계 완료 - SPDT 스위치 MMIC 제작 완료 - SPDT 스위치 패키지 및 측정 완료
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