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Mems Microphone Acoustic Sensor Open Circuit Sacrificial Layer Cmos Process Parasitic Capacitance Cmos Technology Sound Source Localization Micro-Electro-Mechanical System(MEMS) Active Area Capacitive-Type Output Voltage Power Amplifiers(PAs) Current Feedback Structure-Based Capacitance Model Delta-Sigma Modulator Multi-Layer Microphone Array Positive Feedback Switching Amplifier Active Devices Conventional Model Linear Amplifier 65nm Cmos 3 V Bias Voltage High Frequency(HF) Lumped Parameters Power Supply Chip Area Spurious-Free Dynamic Range(SFDR) Sensor Based Low Distortion Flicker Noise(1/f) Chopper Stabilization I/O Devices Gaussian Mixture Model(GMM) Front-End Equivalent Circuit Modelling Low-Power Signal Bandwidth Distortion Ratio Amorphous Si Bonding Process Bias Scheme Behavioral Model Electrical Sensing Control Functions Coherent-To-Diffuse Ratio Duty Cycle(DC) Excellent Performance Fire Detection Leakage Current Output Frequency Output Buffer Photolithography Process Pull-In Voltage Sound Field Uwb System Zero-Bias Za Modulator Source Location Voltage Swing Air-Gap An Inverter Clock Jitter Controller Area Network(CAN) Co-Simulation Etching Selectivity Feedback Signal Energy Efficiency High-Precision High-Speed Operation High Figure Of Merit High Performance Low Threshold Voltage Multi-Channel Mass Sensor Noise Performance Noise Filter Nano Resonator Output Impedance Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition(PECVD) Peak Efficiency Rf Power Amplifier Supply Modulator Steered Response Power Successive Approximation Analog-To-Digital Converter(SAR ADC) Al Electrodes Amplitude Modulator Controlled Voltage Source Core-Chip Db-Linear Gain Control Driving Voltage Envelope Signal Fabrication Process Gain-Bandwidth Product Fourth-Order Intrinsic Capacitance Inverter-Based Input Referred Noise Liquid Media Mhz Bandwidth Natural Frequency Piezoelectric Resonator Peak-Signal-To-Noise-Ratio(PSNR) Small-Signal State-Of-The-Art Wider Bandwidth Sensor Bias Isotropic Etching Temperature Change Azimuthal Angle Back-Plate Device Fabrication Damper System Gmm Method Feedback Paths(FBP) Hybrid Switching Initial Gap Input Signal Inlet Type In-Band Noise Model-Based Mhz Switching Frequency Mass-Spring Oscillation Frequency Polar Modulation Self-Sustaining Total Power Consumption Wearable Glasses Analytical Model Continuous-Time Current Consumption Cross-Correlation Correlation Ratio Current-Sensing Circuit Data Weighted Averaging Dynamic Element Matching Electric Field Method High Snr High Efficiency Low Voltage Differential Signaling(LVDS) Large-Scale Long-Range Pa System Reference Current Sampling Frequency Signal Noise Ratio(SNR) Spurious Tones 7 Mm Transimpedance Amplifier(TIA) Wide Input Range Spectral Mask Voltage Booster Voltage Feedback 3-Db Bandwidth Current-Steering Dac Current Source Dc Gain Error Rate Effective Capacitance Fem Simulation Gmm Classifier High Linearity Harmonic Distortion(HD) Input Feedforward Microphone Readout Maximum Output Power Operational Transconductance Amplifier Proposed Model Reference Buffer Residual Stress Return-To-Zero(RZ) Rail-To-Rail Spin-Coated Standard Bulk Cmos Sigma-Delta Modulator Ultra-Wide Band(UWB) Wide Dynamic Range(WDR) Switched-Mode Power Amplifier Amplification Technique Chemical Vapour Deposition(CVD) Critical Point Capture Module Dynamic Responses Frequency Response(FreRes) Heterogeneous Integration Integrated Process Lumped Model Integration Platform Leakage Suppression Low Phase Noise Phase Transform Readout Integrated Circuit Resonant Frequency(Fr) Switching Supply Switched-Capacitor Circuit Stabilization Technique SRP-PHAT 20 Hz Source Follower Voltage Controlled Verilog-A Model Tensile Stress Amplifier Circuit Class Ab(CAB) Disabled People Frequency Information Inlet Structure Low Switching Maximum Power Motional Resistance Neural Recording Pulse Generator Pre-Emphasis Resistor Network Ripple Current Standard Cmos Second-Order Spring-Damper Supply Voltage Signal Amplification Sensor Module Wide Bandwidth Low Noise Smart Sensor