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Conference
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2019 |
트렌치 형상에 따른 1200V 100A급 4H-SiC Trench Gate MOSFET 제작
Kim Sang Gi SiC 반도체 컨퍼런스 2019, pp.31-31 |
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Journal
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2016 |
High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
Kim Sang Gi Transactions on Electrical and Electronic Materials, v.17, no.5, pp.301-304 |
0 |
원문
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Journal
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2016 |
High Performances of Metal-Substrate Power Module for Electrical Application
Kim Jongdae ETRI Journal, v.38, no.4, pp.645-653 |
0 |
원문
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Journal
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2016 |
Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application
Won Jong Il ETRI Journal, v.38, no.2, pp.244-251 |
10 |
원문
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Conference
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2016 |
Analysis of High-Density Trench Gate MOSFET using SIde-wall Spacer Technology
Kim Sang Gi International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.751-752 |
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Conference
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2016 |
BCD Technology with an integrated Trench Gate MOSFET for Smart Power IC
Won Jong Il International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.745-746 |
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Journal
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2015 |
Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter
Won Jong Il Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221 |
2 |
원문
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Journal
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2013 |
Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar
Kim Sang Gi ETRI Journal, v.35, no.4, pp.632-637 |
8 |
원문
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Conference
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2013 |
A BCD Process Technology in Smart Power IC with Integrated Trench Gate MOSFET
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2013, pp.1-1 |
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Conference
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2013 |
A Novel Super-Junction Trench Gate MOSFET Fabricated Using High Aspect-Ratio Trench Etching and Boron Lateral Diffusion Technologies
Kim Sang Gi International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013, pp.233-236 |
5 |
원문
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Journal
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2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
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Journal
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2010 |
High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique
Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805 |
3 |
원문
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Conference
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2009 |
A High Density Nano-Scale N-Channel Trench Gate Power MOSFET using Self-Aligned Technique
Kim Sang Gi International Conference on Microwave and Photonics (ICMAP) 2009, pp.1-1 |
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Journal
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2004 |
High-density Trench Gate DMOSFETs with Trench Contact Structure
Kim Jongdae Electronics Letters, v.40, no.11, pp.699-700 |
5 |
원문
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