Subjects : compound semiconductor
Type | Year | Title | Cited | Download |
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Conference | 2023 | Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology Kong Sunwoo International Conference on Consumer Electronics (ICCE) 2023 : Asia, pp.1-3 | 0 | 원문 |
Journal | 2018 | Trends in Terahertz Semiconductor based on Electron Devices Kang Dongwoo 전자통신동향분석, v.33, no.6, pp.34-40 | 원문 | |
Journal | 2017 | Technical Trend of Fusion Semiconductor Devices Composed of Silicon and Compound Materials Lee Sang-Heung 전자통신동향분석, v.32, no.6, pp.8-16 | 원문 | |
Journal | 2012 | Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 | 1 | 원문 |
Conference | 2012 | Current Status of GaN Technologies in ETRI Mun Jae Kyoung Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2 |
Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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Registered | 2009 | The Structure and its Fabrication Methods of Compound Semiconductor Device for Hi gh Power Radio Frequency Control Circuits | UNITED STATES | ||
Registered | 2017 | Electronic circuitry Chip with Monolithically-integrated Vertical Input/Output Optical Unit fabricatated on Bulk Silicon substrate | UNITED STATES | ||
Registered | 2011 | AVALANCHE PHOTODIODES HAVING ACCURATE AND REPRODUCTIBLE AMPLIFICATION LAYER | UNITED STATES | ||
Registered | 2014 | AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME | UNITED STATES | ||
Registered | 2007 | Long Wavelength Vertical Cavity Surface Emitting Laser and Method for Fabricating the Same | UNITED STATES | ||
Registered | 2021 | 화합물 반도체 소자 | KOREA | KIPRIS | |
Registered | 2021 | COMPOUND SEMICONDUCTOR DEVICE | UNITED STATES | ||
Registered | 2009 | METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION | UNITED STATES |