Subject

Subjects : h-SiC

  • Articles (14)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2019 Fabrication and Characterication of Using Room Temperature Implantation 4H-SiC Schottky Barrier Diode   Doohyung Cho  SiC 반도체 컨퍼런스 2019, pp.57-57
Conference 2019 트렌치 형상에 따른 1200V 100A급 4H-SiC Trench Gate MOSFET 제작   Kim Sang Gi  SiC 반도체 컨퍼런스 2019, pp.31-31
Conference 2018 Design and Fabrication of 4H-SiC Lateral IGBT with Drift Segmentation using Trench Process   Won Jong Il  한국 반도체 학술 대회 (KCS) 2018, pp.826-826
Journal 2017 A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor   Doohyung Cho  Journal of the Korean Physical Society, v.71, no.3, pp.150-155 5 원문
Journal 2017 Control of PN-Junction Turn-on Voltage in 4H-SiC merged PiN Schottky Diode   Junbo Park  Applied Physics Letters, v.110, no.14, pp.1-5 7 원문
Conference 2017 Surge Current Capacity of 4H-SiC Merged PiN Schottky Diode   Junbo Park  한국 반도체 학술 대회 (KCS) 2017, pp.1-1
Conference 2016 A Study on the Electrical Characteristics of 4H-SiC JBS Diode Depending on the Schottky Area   Won Jong Il  대한전자공학회 학술 대회 (추계) 2016, pp.1057-1058
Journal 2016 Surface Al Doping of 4H-SiC Via Low Temperature Annealing   Junbo Park  Applied Physics Letters, v.109, no.3, pp.1-5 5 원문
Conference 2016 Characteristic of 2.3kV 4H-SiC Diode using Multi Space Modulated JTE Technology   Kim Sang Gi  대한전자공학회 종합 학술 대회 (하계) 2016, pp.260-261
Conference 2016 Fabrication and Measurement of 1700V Silicon Carbide Power Diode on 6-inch 4H-SiC Wafer   Won Jong Il  대한전자공학회 종합 학술 대회 (하계) 2016, pp.258-259
Conference 2015 Fabrication of 1700V SiC Power Diode on 6 inch 4H-SiC Wafer   Won Jong Il  한국세라믹학회 학술 대회 (추계) 2015, pp.1-1
Journal 2015 High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer   Cho Doo Hyung  Japanese Journal of Applied Physics, v.54, no.12, pp.1-5 6 원문
Conference 2015 Breakdown Characteristics of Edge Termination (Single/Double Zone JTE) with Doping concentration and Interface charge for 1700V 4H-SiC Schottky Diode   Won Jong Il  대한전자공학회 종합 학술 대회 (하계) 2015, pp.212-214
Conference 2015 Surface Passivation Oxide Study of 4H-SiC Bipolar Junction Transistors   Hyung Seok Lee  한국 반도체 학술 대회 (KCS) 2015, pp.193-193
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