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Conference
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2019 |
Schottky Barrier Height Modulation by ZnO Interlayer for High-Performance MoS2 Field-Effect Transistors
Jisu Jang International Conference on Advanced Electromaterials (ICAE) 2019, pp.1-1 |
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Journal
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2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
무하마드칸 Nanotechnology, v.29, no.39, pp.1-6 |
8 |
원문
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Journal
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2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 |
21 |
원문
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Journal
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2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
24 |
원문
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Journal
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2017 |
Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
김준영 Nanoscale, v.9, no.18, pp.6151-6157 |
132 |
원문
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Journal
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2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 |
5 |
원문
|
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Conference
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2016 |
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
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Journal
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2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
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Journal
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2011 |
Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs
최성진 IEEE Transactions on Electron Devices, v.58, no.2, pp.427-432 |
36 |
원문
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Conference
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2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
|
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Journal
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2008 |
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 |
5 |
원문
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|
Journal
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2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
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Conference
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2007 |
Schottky Barrier Heights of ErSi1.7 Schottky Diodes
Jun Myung Sim International Conference on Micro and Nano Engineering (MNE) 2007, pp.1-2 |
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Journal
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2003 |
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209 |
16 |
원문
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Journal
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2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137 |
8 |
원문
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Journal
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2002 |
Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model
Jang Moon Gyu ETRI Journal, v.24, no.6, pp.455-461 |
40 |
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