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Conference
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2024 |
Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283 |
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Conference
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2024 |
The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs
Sungjae Chang 한국반도체 학술대회 (KCS) 2024, pp.397-397 |
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Journal
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2023 |
Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel
Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 |
2 |
원문
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Conference
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2022 |
Effect of T-gate Structure on RF Characteristic in AlGaN/GaN HEMTs
Jung Hyunwook International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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Conference
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2022 |
Impact of T-Gate Head Size on Frequency Properties in GaN-based HEMTs
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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Conference
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2014 |
L/S-Band 0.5 μm AlGaN/GaN MISFET including SiN-Assisted T-Gate Structure
Hokyun Ahn International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.70-70 |
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
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Conference
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2007 |
Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel
Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113 |
0 |
원문
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Journal
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 |
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Conference
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2006 |
Influence of T-Gate Shape on the Device Characteristics in SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn International Conference on Solid State Devices and Materials (SSDM) 2006, pp.1-2 |
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원문
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Conference
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2006 |
50㎚ E-Beam Lithography Process using a Bilayer Resist Structure for Nano T-gate MHEMTs
Shim Jae Yeob International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1 |
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Journal
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Jong-Won Lim Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 |
0 |
원문
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Conference
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Conference
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2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311 |
8 |
원문
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