Subject

Subjects : GaN-on-Si

  • Articles (13)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 원문
Conference 2020 30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge   Jeho Na  International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1
Journal 2019 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 원문
Conference 2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   Kim Zin-Sig  대한전자공학회 학술 대회 (하계) 2018, pp.195-198
Journal 2017 Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure   Lee Hyun Soo  Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 1 원문
Conference 2016 Electrical Characteristics of GaN Power MISHEMTs with GaN-on-Si and GaN-on-SI-SiC epi wafers   Mun Jae Kyoung  대한전자공학회 종합 학술 대회 (하계) 2016, pp.275-277
Journal 2015 0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal   Lee Hyun Soo  IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 53 원문
Conference 2015 Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure   Lee Hyun Soo  International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177
Journal 2015 Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching   Hyun-Gyu Jang  Japanese Journal of Applied Physics, v.54, no.7, pp.1-5 3 원문
Journal 2014 Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths   Park Young Rak  Electronics Letters, v.50, no.16, pp.1164-1165 18 원문
Journal 2013 Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1 1 1) platform-based devices   Sang Choon Ko  Journal of Micromechanics and Microengineering, v.23, no.3, pp.1-7 3 원문
Conference 2013 S-Band 170W Pulsed SSPA Using 30W GaN-on-Si RF Power HEMT   Dong Min Kang  한국 반도체 학술 대회 (KCS) 2013, pp.1-2
Conference 2012 Current Status of GaN Technologies in ETRI   Mun Jae Kyoung  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2
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