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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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원문
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Conference
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2020 |
30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge
Jeho Na International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1 |
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Journal
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2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
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원문
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Conference
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2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Kim Zin-Sig 대한전자공학회 학술 대회 (하계) 2018, pp.195-198 |
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Journal
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2017 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Lee Hyun Soo Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 |
1 |
원문
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Conference
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2016 |
Electrical Characteristics of GaN Power MISHEMTs with GaN-on-Si and GaN-on-SI-SiC epi wafers
Mun Jae Kyoung 대한전자공학회 종합 학술 대회 (하계) 2016, pp.275-277 |
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Journal
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2015 |
0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
Lee Hyun Soo IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 |
53 |
원문
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Conference
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2015 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Lee Hyun Soo International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177 |
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Journal
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2015 |
Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
Hyun-Gyu Jang Japanese Journal of Applied Physics, v.54, no.7, pp.1-5 |
3 |
원문
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Journal
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2014 |
Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
Park Young Rak Electronics Letters, v.50, no.16, pp.1164-1165 |
18 |
원문
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Journal
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2013 |
Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1 1 1) platform-based devices
Sang Choon Ko Journal of Micromechanics and Microengineering, v.23, no.3, pp.1-7 |
3 |
원문
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Conference
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2013 |
S-Band 170W Pulsed SSPA Using 30W GaN-on-Si RF Power HEMT
Dong Min Kang 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2012 |
Current Status of GaN Technologies in ETRI
Mun Jae Kyoung Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2 |
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