Journal
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2024 |
LACT: Liveness-Aware Checkpointing to Reduce Checkpoint Overheads in Intermittent Systems
Youngbin Kim Journal of Systems Architecture, v.153, pp.1-13 |
1 |
원문
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Conference
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2023 |
Liveness-Aware Checkpointing of Arrays for Efficient Intermittent Computing
Youngbin Kim Design, Automation & Test in Europe Conference (DATE) 2023, pp.1-6 |
0 |
원문
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Journal
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2020 |
Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
Kim Yeriaron Current Applied Physics, v.20, no.12, pp.1441-1446 |
16 |
원문
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Journal
|
2020 |
Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure
Im Solyee Micromachines, v.11, no.10, pp.1-10 |
9 |
원문
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Conference
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2020 |
AniFilter
오형준 European Conference on Computer Systems (EuroSys) 2020, pp.1-15 |
3 |
원문
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Journal
|
2020 |
Wireless Transceiver Aided Run-Time Secret Key Extraction for IoT Device Security
Oh Mi Kyung IEEE Transactions on Consumer Electronics, v.66, no.1, pp.11-21 |
19 |
원문
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Conference
|
2019 |
End Performance SLA Support for Disaggregated Memory
Koh Kwang-Won Workshop on Resource Disaggregation (WORD) 2019, pp.1-5 |
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Journal
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2018 |
Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method
Moon Seungeon Journal of the Korean Physical Society, v.73, no.11, pp.1712-1715 |
0 |
원문
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Journal
|
2018 |
Solution-Processed Flexible NiO Resistive Random Access Memory Device
김수정 Solid-State Electronics, v.142, pp.56-61 |
9 |
원문
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Journal
|
2016 |
Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate
Soon-Won Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.20, pp.4485-4490 |
28 |
원문
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Journal
|
2014 |
Dynamic Data Migration in Hybrid Main Memories for In-Memory Big Data Storage
Mai Hai Thanh ETRI Journal, v.36, no.6, pp.988-998 |
11 |
원문
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Journal
|
2014 |
Voltage Switching of a VO2 Memory Metasurface Using Ionic Gel
M. D. Goldflam Applied Physics Letters, v.105, no.4, pp.1-4 |
67 |
원문
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Journal
|
2014 |
Voltage Switching of a VO2 Memory Metasurface Using Ionic Gel
M. K. Liu Applied Physics Letters, v.105, no.4, pp.1-4 |
67 |
원문
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Journal
|
2013 |
A Non-volatile Memory Lifetime Extension Scheme Based on the AUTOSAR Platform Using Complex Device Driver
Ju Seok Shin 대한임베디드공학회논문지, v.8, no.5, pp.235-242 |
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원문
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Journal
|
2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469 |
6 |
원문
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Conference
|
2013 |
New CAN Calibration Method by Using Diagnostic Message in AUTOSAR Platform
Hwang Hyun-Yong International Conference on Sensor and Its Applications (SIA) 2013, pp.73-78 |
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Journal
|
2013 |
Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
최민섭 Nature Communications, v.4, pp.1-7 |
602 |
원문
|
Conference
|
2012 |
A Non-Volatile Memory Management Scheme for Automotive Electronic Control Units
Ju Seok Shin International Conference on Connected Vehicles and Expo (ICCVE) 2012, pp.237-238 |
2 |
원문
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Conference
|
2012 |
Design of New AUTOSAR Memory Stack for Diagnostic Message
Hwang Hyun-Yong International Conference on Information and Communication Technology Convergence (ICTC) 2012, pp.559-560 |
1 |
원문
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Journal
|
2012 |
High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory
Kang-Jun Baeg Advanced Functional Materials, v.22, no.14, pp.2915-2926 |
204 |
원문
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Journal
|
2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
108 |
원문
|
Journal
|
2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168 |
23 |
원문
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Journal
|
2008 |
Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory
Back Gangjoon Advanced Functional Materials, v.18, no.22, pp.3678-3685 |
264 |
원문
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Conference
|
2002 |
Sense Amplifier Design for A NOR Type Non-Volatile Memory
Yang Yil Suk International Technical Conference on Circuits Systems, Computers and Communications (ITC-CSCC) 2002, pp.1558-1559 |
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