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Journal
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2024 |
β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 |
4 |
원문
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Conference
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2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
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Conference
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2016 |
Analysis of High-Density Trench Gate MOSFET using SIde-wall Spacer Technology
Kim Sang Gi International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.751-752 |
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Conference
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2016 |
BCD Technology with an integrated Trench Gate MOSFET for Smart Power IC
Won Jong Il International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.745-746 |
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Journal
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2015 |
Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter
Won Jong Il Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221 |
2 |
원문
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Journal
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2013 |
Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions
Na Kyoung Il ETRI Journal, v.35, no.3, pp.425-430 |
4 |
원문
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Conference
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2013 |
Effects of Various Field Plates for Normally-Off GaN MISFETs
Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333 |
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Conference
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2013 |
Simulation Studies of Triple Gate Trench Power MOSFETs (TGRMOSs) by Using Modified Resurf Stepped Oxide (RSO) Process with Various Gate Configuration and its Bias Condition
Na Kyoung Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Journal
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2012 |
Simulation and Fabrication Studies of Semi-SuperJunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer
Na Kyoung Il ETRI Journal, v.34, no.6, pp.962-965 |
16 |
원문
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Journal
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2010 |
High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique
Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805 |
3 |
원문
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Journal
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2004 |
High-density Trench Gate DMOSFETs with Trench Contact Structure
Kim Jongdae Electronics Letters, v.40, no.11, pp.699-700 |
5 |
원문
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Journal
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2004 |
A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC
손원소 ETRI Journal, v.26, no.1, pp.7-12 |
6 |
원문
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Journal
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2003 |
A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing
Kim Jongdae IEEE Transactions on Electron Devices, v.50, no.2, pp.378-383 |
5 |
원문
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Journal
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2002 |
A Novel Process for Fabricating a High Density Trench MOSFETs for DC-DC Converters
Kim Jongdae ETRI Journal, v.24, no.5, pp.333-340 |
24 |
원문
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