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Conference
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2018 |
Nonvolatile Memory Devices of ReS2 Nanosheets- Polyvinylalcohol Composites
Junjae Yang International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1 |
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Journal
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2018 |
Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface
Kim Tae Yoon ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412 |
14 |
원문
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Journal
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2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 |
18 |
원문
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Journal
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2015 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
Soon-Won Jung Organic Electronics, v.16, pp.46-53 |
50 |
원문
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Journal
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2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469 |
6 |
원문
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Journal
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2013 |
Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
최민섭 Nature Communications, v.4, pp.1-7 |
602 |
원문
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Conference
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2012 |
Transparent Nonvolatile Memory Device using Silicon Quantum Dots
Rae-Man Park International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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Journal
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2012 |
Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method
Yong Suk Yang Journal of the Korean Physical Society, v.60, no.10, pp.1504-1507 |
6 |
원문
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Journal
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519, no.18, pp.6174-6177 |
0 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Kim Jongyun Nano Letters, v.10, no.11, pp.4381-4386 |
547 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Hu Young Jeong Nano Letters, v.10, no.11, pp.4381-4386 |
547 |
원문
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Journal
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2009 |
Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.48, no.9, pp.1-4 |
3 |
원문
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Journal
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2009 |
Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys
Yoon Sung Min Solid-State Electronics, v.53, no.5, pp.557-561 |
6 |
원문
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Journal
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2007 |
Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
Yoon Sung Min Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 |
17 |
원문
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Journal
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2007 |
Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films
Yoon Sung Min Applied Surface Science, v.254, no.1, pp.316-320 |
50 |
원문
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Journal
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2007 |
Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5
Yoon Sung Min Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102 |
18 |
원문
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Journal
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2005 |
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 |
36 |
원문
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