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Conference
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2020 |
Structural Design and Simulation of MOS Controlled Thyristor with 0V Turn-off Capability
Sungkyu Kwon 대한전자공학회 학술 대회 (추계) 2020, pp.157-160 |
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Journal
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2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
3 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
9 |
원문
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Journal
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2017 |
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68 |
16 |
원문
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Journal
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2017 |
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
강민식 Nanoscale, v.9, no.4, pp.1645-1652 |
48 |
원문
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Journal
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2016 |
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
Woojin Chang ETRI Journal, v.38, no.1, pp.133-140 |
8 |
원문
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Journal
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2013 |
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
Jong-Won Lim Thin Solid Films, v.547, pp.106-110 |
10 |
원문
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Conference
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2012 |
A Single-Input Level Shifter for Oxide TFTs
김준동 International Meeting on Information Display (IMID) 2012, pp.1-2 |
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Journal
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2011 |
Charge Injection Engineering of Ambipolar Field-Effect Transistors for High-Performance Organic Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.3, no.8, pp.3205-3214 |
154 |
원문
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Journal
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2007 |
Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor
Koo Jae Bon Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066 |
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Journal
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2007 |
Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric
Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137 |
26 |
원문
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