ETRI-Knowledge Sharing Plaform

Coherent Receiver Spot Size Converter(SSC) Polarization Dependent Loss Single Photon Source Threading Dislocations(TDs) Quantum Key Distribution High Responsivity Silicon-Based Low Polarization 3-Db Bandwidth Selective Area Growth Low-Cost Cost-Effective Waveguide Photodetector On-Chip Photonic Devices Threading Dislocation Density Electron Channeling Contrast Imaging III-V 6 Ghz Highly Efficient Inp-Based Planar Lightwave Circuit(PLC) Chip-To-Chip Light Sources Metalorganic Chemical Vapor Deposition Crack-Free Simulation Results DP-16QAM Quantum Communication Stimulated Emission Ultraviolet Laser Diode Creative Technology Free Space Integrated Waveguide Low Temperature(LT) Plasmonic Mode Silica-Based Continuous Wave(CW) Chip Bonding Hybrid Integration Printed Circuit Board(PCB) Three Dimensional(3D) Waveguide Structure Surface Roughness Inas Qds Building Block High Temperature Hybrid Technique Inas/Gaas Quantum Dot Rf Performance DP-QPSK Epitaxial Layer Gaas On Si Optimal Thickness Photonic Circuits Reference Frame Thermal Cycle Annealing Bit Error Rate(And BER) Beam Tracking Mach-Zehnder(MZ) Dual-Polarization Alignment Tolerance Absorption Coefficient Atomically Flat Surface Design And Fabrication Electrical Properties(I-V curve) Finite-Difference Beam Propagation Method Gan Templates Inverted Pyramid Low Growth Temperature Optical Fiber Networks Nitride-Based Quantum-Well Laser Si Gaas Standard Single-Mode Fiber Truncated Pyramid Threshold Current Density Tracking System Transmission Line Visible Light V/Iii Ratio Carrier Injection Quantum States Beam Splitter Energy Saving High Performance Gaas Films Guided Modes Highly Sensitive Hybrid Assembly Index Contrast High-Speed Operation Indium Gallium Arsenide Long Wavelength Light Emitting Device Lateral Growth Local Oscillator Metallic Structure Mems-Based Numerical Aperture Organic Vapor Polar Facets Recombination Time Self-Assembled Waveguide Integrated Mole Fraction Annealing Process Active Compensation Coupled With Comparative Analysis Crystal Quality Efficiency Droop Fabrication Process Forward Error Correction(FEC) Matching Layer Nucleation Layer Off-Line Optical Confinement Factor Peak Intensity Plug-And-Play Phase Shift Single Emitter Spontaneous Emission Rate Room-Temperature Surface Morphology Silicon Photonics Thermal Stability(TGA) Taper Structure Two-Step Growth Telecom Wavelength Self-Aligned Aluminum Gallium Arsenide Common Mode Rejection Ratio Electrically Driven Evanescent Coupling Epitaxially Grown Force Microscopy Flexible Printed Circuit Inas Quantum Dots Inp Quantum Dot Indium Gallium Phosphide Light Coupling Low Coupling Multi-Quantum-Well Lattice Matched Multiple-Quantum-Well(MQW) Monolithic Integration Quantum Dot Laser Optically Pumped Optical Analysis Peak Wavelength Pyramid Structure Plasmonic Circuit Phosphor-Free Pin Photodiodes Quantum Simulation Quantum Computation Quantum Devices Receiver Module Spectral Range Transverse-Magnetic Polarization Uv Laser 100 G 45 Ghz Back-To-Back Red Color As 2 Built-In Control Sample Coupling Efficiency Capacitively Loaded Compact Device Controlled Growth Electroluminescence Spectra Electrical And Optical Properties Electron Microscope Fabrication And Characterization Four-Channel Fast Steering Mirror High Efficiency Green Color Highly Strained Long-Term Stability Laser Applications Monolithically Integrated Nonradiative Recombination N-Doped Optical Hybrid Operation Condition Rf Transmission Solid State Spatial Variation Spatially Resolved Second Step Substrate Thickness Signal Noise Ratio(SNR) Systematic Study Transfer Technique Transimpedance Amplifier(TIA) Ultraviolet A White Light-Emitting Wave Equation Atomic Force Microscope(AFM) Crossing Effect Cavity Length Cmos-Compatible Double Heterostructures Cladding Layer Gan-Based Gallium Nitride(GaN) High Quantum Efficiency Light-Emitting Diodes (Leds) Low Pressure Long Distance Transmission Multi-Color Mocvd Growth Maximum Output Power Optical Signal-To-Noise Ratio(OSNR) Optical Misalignment Quantum Light Random Position Single Quantum Emitter Sub-Ns Structure Parameters Silica Hybrid Strained Layer Smooth Surface Travelling Wave Vertical Growth Very Large Scale Integration(VLSI) Growth Method Application Fields Butt-Coupling Challenging Issues Digital Signal Processing Emission Efficiency Essential Element Fiber Optic Gan Substrate Growth Rate Internal Quantum Efficiency Heterogeneous Integration Manufacturing Cost Optoelectronic Devices Plasmonic Nanofocusing Photon Sources Quantum Information Processing Quadrature Phase Pulsed Operation Red Emission Reliable Transmission Uni-Traveling-Carrier Photodiode(UTC-PD) Surface Leakage Current Root Mean Square Value Site-Controlled Qds Signal Transmission Ultra-Narrow Visible Emission Visible Region Wafer-Scale Integration Material Quality Applied Bias Voltage Broadband Emission Compositional Variation Diffusion Length Electric Field Fabry-Perot Cavity High-Angle Annular Dark Field Scanning Transmission Electron Microscopy Growth Mode Injection Efficiency Imaging Method Multi-Polarization Optical Alignment Optical Pumping Photonic Structures Pick-And-Place Quantum Plasmonics Quantum Control Relative Ratio Single Quantum Dots Semi-Polar Sapphire Substrates Single Photon Emitters Si Substrate Semiconductor Quantum Dots Size Distribution Soft-Decision Transmitter And Receiver Vapor Phase Epitaxy White Led