|
Journal
|
2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
2 |
원문
|
|
Journal
|
2016 |
Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric
Lee Da Jung Materials Research Bulletin, v.83, pp.597-602 |
10 |
원문
|
|
Journal
|
2012 |
Encapsulation of Semiconductor Gas Sensors with Gas Barrier Films for USN Application
Lee Hyung-Kun ETRI Journal, v.34, no.5, pp.713-718 |
19 |
원문
|
|
Journal
|
2012 |
Insulating oxide buffer layer formed by sol–gel method for planarization of stainless steel substrate of a-Si:H thin film solar cell
Sun Jin Yun Materials Research Bulletin, v.47, no.10, pp.3044-3047 |
6 |
원문
|
|
Journal
|
2012 |
Fabrication of a HCHO gas sensor based on a MEMS heater and inkjet printing
Lee Hyung-Kun Journal of the Korean Physical Society, v.60, no.2, pp.225-229 |
10 |
원문
|
|
Journal
|
2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
108 |
원문
|
|
Conference
|
2009 |
Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED
Cho Doo-Hee International Meeting on Information Display (IMID) 2009, pp.318-321 |
|
|
|
Journal
|
2009 |
Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328 |
12 |
원문
|
|
Journal
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534 |
43 |
원문
|
|
Journal
|
2007 |
Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol-Gel Process
Chae Byung Gyu Japanese Journal of Applied Physics, v.46, no.2, pp.738-743 |
30 |
원문
|
|
Journal
|
2006 |
Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure
Koo Jae Bon Electrochemical and Solid-State Letters, v.9, no.11, pp.G320-G322 |
9 |
원문
|
|
Journal
|
2006 |
Rare-Earth Gate Oxides for GaAs MOSFET Application
권광호 Applied Surface Science, v.252, no.21, pp.7624-7630 |
4 |
원문
|
|
Conference
|
2006 |
Plasma Oxidation Effect on Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate
Kim Yong Hae International Meeting on Information Display 2006, pp.1122-1125 |
|
|
|
Journal
|
2006 |
Long-wavelength InAlGaAs VCSELs with Al2O3 Embedded Current-confinement Apertures
Song Hyun Woo Electronics Letters, v.42, no.14, pp.808-809 |
4 |
원문
|
|
Journal
|
2005 |
Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
Chae Byung Gyu Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14 |
104 |
원문
|
|
Conference
|
2004 |
Design and performance of a self-sensing, self-actuating piezoelectric monomorph with interdigitated electrodes
Yong K. Hong Optomechatronic Sensors, Actuators, and Control (SPIE 5602), pp.210-217 |
10 |
원문
|
|
Journal
|
2004 |
1.55 [micro sign]m bottom-emitting InAlGaAs VCSELs with Al2O3∕a-Si thin-film pairs as top mirror
Song Hyun Woo Electronics Letters, v.40, no.14, pp.868-869 |
4 |
원문
|