|
Journal
|
2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
|
|
Journal
|
2024 |
A Reconfigurable Step-Down Switched-Capacitor Power Converter Using Optimized Partial Series-Parallel (OPSP) Topology
장충희 IEEE Transactions on Circuits and Systems II: Express Briefs, v.71, no.6, pp.2941-2945 |
1 |
원문
|
|
Conference
|
2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
|
|
|
Conference
|
2022 |
Analysis of Electrical Characteristics of 2500V Class MOS Controlled Thyristor (MCT) device for Pulse power applications
Doohyung Cho Euro-Asian Pulsed Power Conference (EAPPC) 2022, pp.1-2 |
|
|
|
Journal
|
2021 |
Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications
Hyun-Gyu Jang ETRI Journal, v.43, no.6, pp.1103-1112 |
0 |
원문
|
|
Journal
|
2019 |
Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization
Park Kun Sik 전력전자학회논문지, v.24, no.6, pp.411-418 |
|
원문
|
|
Journal
|
2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
|
원문
|
|
Conference
|
2019 |
GaN Device Technology for High Voltage and RF Power Application
Hyung Seok Lee 한러 과학기술의 날 2019, pp.1-1 |
|
|
|
Conference
|
2017 |
Investigation of GaN Power FETs for High Power Applications
Hyung Seok Lee Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2017, pp.1-2 |
|
|
|
Conference
|
2016 |
GaN HEMT Modeling for X-band Applications
Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 |
|
|
|
Conference
|
2015 |
Simplified Near-Magnetic Field of the Resonators in Wireless Power Transfer
Moon Jung Ick International Symposium on Antennas and Propagation (ISAP) 2015, pp.268-270 |
|
|
|
Conference
|
2015 |
700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate
나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
|
|
|
Conference
|
2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
|
|
|
Journal
|
2014 |
Reduction Algorithm for Gas Measurement Time in Wireless Sensor Network Applications with Limited Power
Choi Nak Jin Sensor Letters, v.12, no.6-7, pp.1093-1095 |
0 |
원문
|
|
Conference
|
2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
|
|
|
Journal
|
2013 |
Design and Fabrication of Vibration Based Energy Harvester Using Microelectromechanical System Piezoelectric Cantilever for Low Power Applications
Moonkeun Kim Journal of Nanoscience and Nanotechnology, v.13, no.12, pp.7932-7937 |
15 |
원문
|
|
Conference
|
2011 |
Variation of Electrical Properties with Edge Termination in Mesh Type Trench Double Diffused MOSFETs (TDMOS) for High Power Application
Na Kyoung Il 한국진공학회 학술 대회 (동계) 2008, pp.110-110 |
|
|
|
Journal
|
2006 |
A New Strained-Si Channel High Voltage MOSFET for High Performance Power Applications
Cho Young Kyun ETRI Journal, v.28, no.2, pp.253-256 |
10 |
원문
|
|
Journal
|
2005 |
Highly Reliable Flash Cell for Low Power Application
Park Young Sam Japanese Journal of Applied Physics, v.44, no.11, pp.7816-7819 |
1 |
원문
|