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Journal
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2026 |
Hydrogen-Stable Top-Gate Self-Aligned a-IGZO TFT With Tungsten Nitride Barrier on Source/Drain
김희태 IEEE Electron Device Letters, v.47, no.1, pp.96-99 |
0 |
원문
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Journal
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2021 |
Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication
Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64 |
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원문
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Journal
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2021 |
Growth and Device Properties of ALD Deposited ZnO Films for CIGS Solar Cells
Vinaya Kumar Arepalli Materials Science in Semiconductor Processing, v.121, pp.1-8 |
16 |
원문
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Journal
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
Hang Kang Applied Surface Science, v.528, pp.1-8 |
3 |
원문
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Journal
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
Sun Jin Yun Applied Surface Science, v.528, pp.1-8 |
3 |
원문
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Journal
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2019 |
Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits
Lee Sang-Heung 전자통신동향분석, v.34, no.5, pp.71-80 |
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원문
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Journal
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2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
무하마드칸 Nanotechnology, v.29, no.39, pp.1-6 |
8 |
원문
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Journal
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2018 |
Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation
Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90 |
10 |
원문
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Journal
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2018 |
Investigation of the Evolution of Nitrogen Defects in Flash-Lamp-Annealed InGaZnO Films and Their Effects on Transistor Characteristics
엄태일 Applied Physics Express, v.11, no.6, pp.1-4 |
12 |
원문
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Journal
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2018 |
Interface and bulk properties of Cu(In,Ga)Se 2 solar cell with a cracker-ZnS buffer layer
Lee Woo Jung Current Applied Physics, v.18, no.4, pp.405-410 |
5 |
원문
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Journal
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2018 |
Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521 |
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원문
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Journal
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2017 |
Growth of 10 nm‐thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance
김정길 Physica Status Solidi (B), v.254, no.8, pp.1-5 |
2 |
원문
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Journal
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2016 |
Solution-processed Indium-free ZnO/SnO2 Bilayer Heterostructures as a Low-temperature Route to High-performance Metal Oxide Thin-film Transistors with Excellent Stabilities
Sooji Nam Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.47, pp.11298-11304 |
47 |
원문
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Journal
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2016 |
The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors
Yeonwha Oh Journal of Nanoscience and Nanotechnology, v.16, no.8, pp.8692-8695 |
2 |
원문
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Conference
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2015 |
Reduction of Carrier Concentration for Low-temperature Indium Oxide Thin-film Transistors by Exposing Ultraviolet Ozone
Kim Hoon International Conference on Molecular Electronics and Devices (IC ME&D) 2015, pp.1-1 |
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Journal
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2013 |
Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator
박준용 Organic Electronics, v.14, no.9, pp.2148-2157 |
7 |
원문
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Journal
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2013 |
Electrical and optical properties of radio frequency magnetron-sputtered lightly aluminum-doped zinc oxide thin films deposited in hydrogen–argon gas
Kim Kyung Hyun Thin Solid Films, v.540, pp.142-145 |
4 |
원문
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Journal
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2012 |
Characteristics of Ti-Doped ITO Films Grown by DC Magnetron Sputtering
Chung Sung Mook Ceramics International, v.38, no.SUPPL. 1, pp.S617-S621 |
20 |
원문
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