Subject

Subjects : Gate Width

  • Articles (17)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2022 Large-Area GaN FET Modeling Using Operating Temperature Distribution Characteristics of Gate Channels   Woojin Chang  International Conference on Consumer Electronics (ICCE) 2022 : Asia, pp.684-687 0 원문
Journal 2017 A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology   Shin Dong Hwan  Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180 5 원문
Journal 2017 Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications   Jongmin Lee  Journal of the Korean Physical Society, v.71, no.6, pp.365-369 7 원문
Conference 2016 GaN HEMT Modeling for X-band Applications   Kim Seong-Il  대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560
Conference 2016 Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate   Jongmin Lee  한국 반도체 학술 대회 (KCS) 2016, pp.1-2
Conference 2015 X-Band Power Amplifier Using 40W GaN-on-SiC HEMT   Dong Min Kang  대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234
Journal 2015 X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology   Dong Min Kang  Microwave and Optical Technology Letters, v.57, no.1, pp.212-216 6 원문
Conference 2014 100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz   Dong Min Kang  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75
Conference 2014 Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts   Hyung Sup Yoon  한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal 2012 An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors   Park Jae Hoon  Japanese Journal of Applied Physics, v.51, no.9 PART3, pp.1-4 4 원문
Journal 2012 Variation in the Electrical Properties of 100 V/100 a Rated Mesh and Stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for Motor Drive Applications   Na Kyoung Il  Journal of the Korean Physical Society, v.60, no.10, pp.1508-1512 0 원문
Conference 2010 Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications   Woojin Chang  대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
Conference 2008 Design of High Performance HEMT Switch for S-band MSM of Satellite Transponder   Chang Dong Pil  Vehicular Technology Conference (VTC) 2008 (Spring), pp.2888-2891 3 원문
Conference 2006 A 3.8-5.5-GHz Multi-Band CMOS Frequency Synthesizer for WPAN/WLAN Applications   Lee Ja Yol  IEEE Custom Integrated Circuits Conference (CICC) 2006, pp.377-380 7 원문
Journal 2006 SPST Switch MMIC for Microwave Switch Matrix   Chang Dong Pil  한국통신학회논문지, v.31, no.2A, pp.201-206
Conference 2005 Thermal characterization of MMIC by Numerical Analysis   Kwak Changsoo  Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 5 원문
Journal 2004 A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC   손원소  ETRI Journal, v.26, no.1, pp.7-12 6 원문
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